Degree

Research History

Education

Awards

• ポスター賞（筆頭）（2012-10）
• Outstanding Poster Award (筆頭)（2006-06）

Others

Papers

• Complex index of refraction of MBE grown 1 eV GaInAsNSb dilute nitride layers as a function of thermal annealing（2025-06） [DOI]
• Abnormal photoluminescence properties of InAs/InAsSb in-plane ultrahigh-density quantum dots（2024-08-01） [DOI] [Othres link] [Othres link]
• Resonant tunneling injection of electrons through double stacked GaAs/InAs quantum dots with nanohole electrode（2023-10-24） [DOI] [Othres link] [Othres link]
• High-density and high-uniformity InAs quantum nanowires on Si(111) substrates（2023-10-18） [DOI] [Othres link]
• Inverse design of intermediate band solar cell via a joint drift-diffusion simulator and deep reinforcement learning scheme（2023-05）
• High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering（2023-04）
• Ultrafast inverse design of quantum dot optical spectra via a joint TD-DFT learning scheme and deep reinforcement learning（2022-11） [DOI] [Web of Scientce] [Othres link]
• Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping（2022-10-31） [DOI] [Othres link]
• Dependence of the radiative lifetime on the type-II band offset in GaAs_xSb_1−x/GaAs quantum dots including effects of photoexcited carriers（2022-10-07） [DOI] [Othres link]
• Demonstration of in-plane miniband formation in InAs/InAsSb ultrahigh-density quantum dots by analysis of temperature dependence of photoluminescence（2022-10） [DOI] [Othres link] [Othres link]
• Enhanced current generation in quantum-dot intermediate band solar cells through optimizing the position of quantum dot layers（2022-10） [DOI]
• Co-deposition of MoS₂ films by reactive sputtering and formation of tree-like structures（2022-08-20） [DOI] [Othres link] [Othres link]
• Self-formation of InAs/InGaAsSb type-II superlattice structures on InP substrates by MBE and their application to mid-infrared LEDs（2022-08-01） [DOI] [Othres link]
• Spectral Splitting Solar Cells Constructed with InGaP/GaAs Two-Junction Subcells and Infrared PbS Quantum Dot/ZnO Nanowire Subcells（2022-07-08） [DOI] [Othres link]
• Collection of photocarriers in intermediate band solar cells: experiments and equivalent circuit analysis（2022-07-01） [DOI]
• Diffusion photocurrent influenced by intraband excitation in an intermediate band solar cell with type-I band alignment（2022-07-01） [DOI] [Othres link] [Othres link]
• Resonant absorption for multilayer quantum well and quantum dot solar cells（2022-04） [DOI] [Scopus] [Scopus]
• Erratum: Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature (Journal of Applied Physics (2021) 130 (124505) DOI: 10.1063/5.0060569)（2021-11-07） [DOI]
• Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature（2021-09-28） [DOI] [Othres link]
• Two-step excitation induced photovoltaic properties in an InAs quantum dot-in-well intermediate-band solar cell（2021-02-21） [DOI] [Othres link]
• Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells（2020-11） [DOI] [Othres link] [Othres link]
• Effect of concentrated sunlight illumination on mobility and concentrator solar cell efficiency（2020-07-01） [DOI] [Othres link] [Othres link]
• Fabrication and optical characterization of ultrathin III-V transferred heterostructures for hot-carrier absorbers（2020-03-03） [DOI]
• Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs（2019-10-14） [DOI] [Scopus] [Scopus]
• Effect of Annealing on The Bottom Cell in GaInP/GaAs/GaInNAsSb Triple Junction Solar Cells by MBE/MOCVD Hybrid Growth（2019-05） [DOI] [Othres link]
• Inverted Lattice-Matched Triple Junction Solar Cells with 1.0 eV GaInNAsSb Subcell by MOCVD/MBE Hybrid Growth（2019-05） [DOI] [Scopus] [Scopus]
• Epitaxial Lift-Off of Ultrathin Heterostructures for Hot-Carrier Solar Cell Applications（2019） [Web of Scientce]
• GaSb/GaAs quantum nanostructures for intermediate band solar cell under high sunlight concentration（2019） [Web of Scientce]
• Light absorption enhancement in ultra-thin layers for hot-carrier solar cells: first developments towards the experimental demonstration of an enhanced hot-carrier effect with light trapping（2019） [DOI] [Scopus] [Scopus]
• Material challenges for solar cells in the twenty-first century: directions in emerging technologies（2018-12-31） [DOI] [Scopus] [Scopus]
• Incorporation of hydrogen into MBE-grown dilute nitride GaInNAsSb layers in a MOCVD growth ambient（2018-10-01） [DOI]
• Enhancement of photocurrent in epitaxial lift-off thin-film GaInNAsSb solar cells due to light-confinement structure（2018-07-01） [DOI]
• Characterization of InGaAs/GaAsN multiple quantum well with flat conduction band for improving carrier transport in multijuction solar cell（2018） [DOI] [Scopus] [Scopus]
• Thin-film multiple-quantum-well solar cells fabricated by epitaxial lift-off process（2018） [DOI] [Scopus] [Scopus]
• N-H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells（2018） [DOI]
• Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap（2017-08） [DOI] [Web of Scientce]
• Effect of Si doping and sunlight concentration on the performance of InAs/GaAs quantum dot solar cells（2017-04） [DOI] [Web of Scientce]
• Improvement of 1.0eV GaInNAsSb solar cell performance upon optimal annealing（2017-03） [DOI] [Web of Scientce]
• Multiband modification of III-V dilute nitrides for IBSC application（2017） [DOI] [Web of Scientce]
• Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells（2017） [DOI] [Web of Scientce]
• Characterization of Cr Doped CuGaS2 Thin Films Synthesized By Chemical Spray Pyrolysis（2017） [DOI]
• Insights on energy selective contacts for thermal energy harvesting using double resonant tunneling contacts and numerical modeling（2016-12） [DOI] [Web of Scientce]
• Growth of ErAs nanodots by molecular beam epitaxy for application to tunneling junctions in multijunction solar cells（2016-02） [DOI] [Web of Scientce]
• Improvement of 1.0 eV GaInNAsSb solar cell performance upon annealing（2016） [Web of Scientce]
• Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells（2016-01） [DOI] [Web of Scientce]
• Evaluation of concentrator photovoltaic properties of GaInNAsSb solar cells for multijunction solar cell applications（2015-08） [DOI] [Web of Scientce]
• Electron Barrier Engineering in a Thin-Film Intermediate-Band Solar Cell（2015-05） [DOI] [Web of Scientce]
• Effect of antimony on the deep-level traps in GaInNAsSb thin films（2014-09） [DOI] [Web of Scientce]
• Fabrication and characterization of GaAs tunnel diode and ErAs nanoparticles enhanced GaAs tunnel diode for multijunction solar cell（2014-05-09） [DOI]
• Fabrication and characterization of GaAs tunnel diode and ErAs nanoparticles enhanced GaAs tunnel diode for multijunction solar cell（2014） [DOI]
• Photocapacitance study of MBE grown GaInNAsSb thin film solar cells（2013-09） [DOI] [Web of Scientce]
• Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells（2013-07） [DOI] [Web of Scientce]
• Effect of Sb on GaNAs Intermediate Band Solar Cells（2013-04） [DOI] [Web of Scientce]
• Effect of antimony on uniform incorporation of nitrogen atoms in GaInNAs films for solar cell application（2013-04） [DOI] [Web of Scientce]
• InAs/GaAs quantum dot solar cell with an AlAs cap layer（2013-04） [DOI] [Web of Scientce]
• Defect study of molecular beam epitaxy grown undoped GaInNAsSb thin film using junction-capacitance spectroscopy（2013-02-18） [DOI]
• Composition control of quinary GaInNAsSb alloy grown by molecular beam epitaxy（2013） [DOI] [Web of Scientce]
• Effect of Sb on GaNAs Intermediate Band Solar Cells（2013） [DOI] [Web of Scientce]
• Identification of defect types in moderately Si-doped GaInNAsSb layer in p-GaAs/n- GaInNAsSb/n-GaAs solar cell structure using admittance spectroscopy（2012-12） [DOI] [Web of Scientce]
• High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy（2012-11） [DOI] [Web of Scientce]
• Extremely long carrier lifetime at intermediate states in wall-inserted type II quantum dot absorbers（2012-11） [DOI] [Web of Scientce]
• Two-photon excitation in an intermediate band solar cell structure（2012-04） [DOI] [Web of Scientce]
• Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots（2012-03） [DOI] [Web of Scientce]
• Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs1-xSbx quantum dots（2012-02） [DOI] [Web of Scientce]
• Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy（2011-11） [DOI] [Web of Scientce]
• Improvement of GaInNAsSb films fabricated by atomic hydrogen-assisted molecular beam epitaxy（2009-06） [DOI] [Web of Scientce]
• Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy（2007-08） [DOI] [Web of Scientce]
• Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE（2007-04） [DOI] [Web of Scientce]
• Optimization of Ga(In)NAs thin film growth by atomic hydrogen-assisted molecular beam epitaxy（2006） [DOI] [Web of Scientce]

Misc

• Light trapping and absorption enhancement in thin-film quantum dot solar cells（2022-06-24） [DOI] [CiNii Research]
• Optimizing the positions of quantum dot layers to increase the light absorption in quantum dot solar cells with light trapping structure（2022） [DOI] [Web of Scientce]
• Optimizing the quantum dot layer position for increasing absorption of intermediate band solar cells（2021-10-12） [DOI] [CiNii Research]
• Enhancement of the light absorption rate of quantum dot solar cells by Fabry-Pérot resonance（2021-02-26） [DOI] [CiNii Research]
• Extending carrier lifetime by controlling the composition of GaAs_xSb_1-x/GaAs quantum dots（2020-02-28） [DOI] [CiNii Research]
• Growth rate dependency of GaAsSb / GaAs Quantum Dots（2019-09-04） [DOI] [CiNii Research]
• Epitaxial Lifted-Off Thin Film GaInP/GaAs/GaInNAsSb Lattice-Matched Triple Junction Solar Cells（2019）
• High-Effciency InAs-InGaAs Quantum Dash Solar Cells Developed Through Current Constraint Engineering（2019） [Web of Scientce]
• Thinned Germanium Substrates for III-V Multijunction Solar Cells（2019）
• Growth of InGaAs: N delta-doped superlattices for multi-junction solar cells（2018） [DOI] [Web of Scientce]
• Hot Carrier Extraction Using Energy Selective Contacts and Feedback on the Remaining Distribution（2018） [DOI]
• Carrier Collection Improvement In InGaAs/GaAsN Multiple Quantum Well Solar Cell With Flat Conduction Band（2018） [DOI] [Scopus] [Scopus]
• Analysis And Control Of Deep-Level Defects In Dilute Nitride Semiconductor GaInNAsSb（2018） [DOI]
• 基板再利用に向けたELO後基板の清浄化工程と再成長の検討（2017-08） [J-GLOBAL] [Othres link]
• 1eV帯InGaAs:Nδドープ超格子の作製（2017-03-01） [J-GLOBAL] [Othres link]
• エピタキシャルリフトオフにより分離したGaAs基板上の堆積物分析（2017-03-01） [J-GLOBAL] [Othres link]
• Multiband Formation in Cr doped CuGaS2 Thin Films Synthesized by Chemical Spray Pyrolysis（2017） [DOI]
• Analysis of Deposited Residues and Its Cleaning Process on GaAs Substrate after Epitaxial Lift-Off（2017） [Web of Scientce] [DOI]
• Laser Beam Induced Current (LBIC) Mapping of InGaP/GaAs/Ge Triple Junction Solar Cells with Luminescence Coupling（2016） [DOI] [Web of Scientce]
• Designing III-V dilute nitride alloys for IBSC application（2016） [DOI] [Web of Scientce]
• Siドープ量子ドット太陽電池の集光特性評価（2015-02-26） [J-GLOBAL] [Othres link]
• Characterization of 1.0 eV GaInNAsSb solar cells for multi-junction applications and the effect of annealing（2015） [DOI]
• Effect of light concentration on Si doped quantum dot solar cells（2015） [DOI]
• Concentrating Photovoltaic Properties of GaInNAsSb/Ge Dual Junction Tandem Solar Cell（2014） [DOI] [Web of Scientce]
• Local conductivity characteristics of individual ErAs island for solar cell tunnel junction application（2014） [DOI] [Web of Scientce]
• Device Structure Engineering of GaInNAsSb/GaAs Heterojunction Solar Cells（2013） [DOI] [Web of Scientce]
• Study on The Device Structure of GaInNAs(Sb) Based Solar Cells for Use in 4-junction Tandem Solar Cells（2012） [DOI] [Web of Scientce]
• Bias dependent admittance measurement of GaInNAsSb-based solar cell structure（2012） [DOI] [Web of Scientce]
• Evaluation of GaInNAs(Sb) solar cells for use in next generation III-V tandem solar cells（2011） [DOI]
• Effect of antimony on electron trap density in GaInNAsSb solar cell grown by atomic hydrogen-assisted molecular beam epitaxy（2010） [DOI]
• ANTIMONY ENHANCED HOMOGENEOUS NITROGEN INCORPORATION INTO GaInNAs FILMS GROWN BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY（2010） [DOI] [Web of Scientce]
• Effect of indium composition on GaInNAsSb solar cells grown by atomic hydrogen-assisted molecular beam epitaxy（2009） [DOI] [Web of Scientce]
• Effect of Increasing Nitrogen Composition on the Performance of GaAs/GaInNAs Heterojunction Solar Cells（2007）
• Fabrication of GaInNAs-based solar cells for application to multi-junction tandem solar cells（2006） [DOI] [Web of Scientce]
• Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications（2006） [DOI] [Web of Scientce]
• Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multi-junction Tandem Structures（2005-09-13） [CiNii Research (CiNii Articles)] [CiNii Books]

Presentations

• 逆積み構造太陽電池のスマートスタックに向けたエピタキシャル薄膜の3回転写プロセス開発（2025-03-16）
• Analyses of Luminescence Coupling in ELO thin-film tandem solar cells（2024-11-14） [ResearchMap] [ResearchMap]
• Characterization of Spalling-released thin-film tandem solar cells（2024-11-13） [ResearchMap] [ResearchMap]
• ELO薄膜タンデム太陽電池の発光結合特性評価（2024-09-19） [ResearchMap]
• Spalling工程による薄膜タンデム太陽電池の作製と評価（2024-09-17） [ResearchMap]
• 2端子型ELO薄膜タンデム太陽電池のサブセルI-V解析（2024-07-11） [ResearchMap]
• バイアス光照射による薄膜タンデム太陽電池の各サブセルのI-V測定（2024-03-24） [ResearchMap]
• InAs/InAsSb面内超高密度量子ドット層の光伝導特性（2024-03-24）
• Si(111)基板上への高密度InAsSb/InAsコアシェルナノワイヤーの成長（2024-03-24）
• Dilute nitride based MQWs with strain compensation for 1.0 eV subcells（2022-11） [ResearchMap]
• Optimizing the positions of quantum dot layers to increase the light absorption in quantum dot solar cells with light trapping structure（2022） [Scopus] [Scopus] [DOI]
• Enhancement of the light absorption rate of quantum dot solar cells by Fabry-Pérot resonance（2021-02-26） [DOI]
• エピタキシャルリフトオフ法を用いた薄膜太陽電池の作製（2020-09）
• エピタキシャルリフトオフ法を用いたエピ薄膜分離と基板再生技術開発（2020-03）
• Extending carrier lifetime by controlling the composition of GaAs_xSb_1-x/GaAs quantum dots（2020-02-28） [DOI]
• Growth rate dependency of GaAsSb / GaAs Quantum Dots（2019-09-04） [DOI]
• Strain Compensated Dilute Nitride MQWs As New 1 eV Solar Cell Absorber（2019-09）
• Study of GaInP/GaAs/GaInNAsSb 3J solar cells: Effect of hydrogen incorporation to GaInNAsSb in MOCVD/MBE hybrid growth（2019-07）
• Epitaxial Lifted-Off Thin Film GaInP/GaAs/GaInNAsSb Lattice-Matched Triple Junction Solar Cells（2019-06）
• Effect of Annealing on The Bottom Cell in GaInP/GaAs/GaInNAsSb Triple Junction Solar Cells by MBE/MOCVD Hybrid Growth（2019-05） [Othres link] [DOI]
• GaSb/GaAs quantum nanostructure solar cells under high sunlight concentration（2019-02-25） [DOI]
• GaSb/GaAs quantum nanostructures for intermediate band solar cell under high sunlight concentration（2019）
• Epitaxial Lift-Off of Ultrathin Heterostructures for Hot-Carrier Solar Cell Applications（2019）
• ELO-released thin film solar cells and application to multi-junction devices（2018-12）
• Inverted growth of lattice-matched multijunction solar cells with 1.0 eV GaInNAsSb subcell（2018-06）
• Inverted and non-inverted grown lattice-matched multijunction solar cells with 1.0eV GaInNAsSb subcell（2017-12）
• Characterization of Inverted Grown Lattice-matching Multijunction Solar Cells with 1.0eV Dilute Nitride Subcell（2017-11）
• Development of dilute nitrides and multijunction solar cells（2017-10）
• Effect of Hydrogen Annealing for Dilute Nitride GaInNAsSb Solar Cells（2017-05）
• Enhancement of photocurrent in thin film dilute nitride cells separated by epitaxial lift-off technique（2017-03）
• Characterization of Dilute Nitride Based Photovoltaics for Multi-junction Solar Cell Applications（2016-12）
• Improvement of Dilute Nitride GaInNAsSb Thin Films and Photovoltaic Characteristics（2016-12）
• Enhancement of Photocurrent in Epitaxial Lift-Off Thin Film GaInNAsSb Solar Cells By The Light Confinement Structure（2016-10）
• Improvement of 1.0 eV GaInNAsSb solar cell performance upon annealing（2016-06）
• Enhancement of Carrier Collection in GaInNAs:Sb Solar Cells（2016-06）
• Improved Carrier Collection in Thick GaInNAsSb Solar Cells（2014-11）
• 多接合太陽電池用GaInNAs(Sb)薄膜のMBE成長と高品質化（2014-11）
• Effect of Electric Field in GaInNAsSb based Solar Cells（2013-09）
• Photovoltaic Characteristics of GaInNAsSb Solar Cells under Concentrated Light Source（2013-04）
• Fabrication of nip and pin structure GaInNAsSb solar cells（2012-12）
• High Electron Mobility in Ga(In)NAs Films Grown by MBE（2012-09）
• Antimony Surfactant Mediated Improvement of the Properties of GaInNAsSb Films for Multi-junction Tandem Solar Cells（2011-04）
• Reduction of nitrogen-induced localized states in GaInNAs films grown by antimony-assisted MBE（2010-06）
• Characteristics of GaInNAsSb Solar Cells Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy（2009-01）

Books and Other Publications

• Photovoltaics for Space（2022-10）

Works

Research Projects

Media Coverage

Industrial Property Rights

Professional Memberships

• The Japan Photovoltaic Society
• THE JAPAN SOCIETY OF APPLIED PHYSICS

Committee Memberships

Teaching Experience

• Introduction to Info-Power and Energy
• Fundamentals of VLSI Fabrication
• Electronic Engineering Laboratory II ;XRD
• Environmental Engineering
• Fundamental of Engineering Science
• Advanced Lectures on Optoelectronics

Social Contribution

Academic Contribution