学位

• 修士（工学）(電気通信大学)
• 博士（工学）(電気通信大学)

経歴

学歴

受賞

• 講演奨励賞受賞

その他

論文

• Lateral photoconductivity of InAs/GaAs quantum dots for 1.5 μm-wavelength excitation photoconductive terahertz antenna devices [DOI]
• Yb-doped Y–Al–O thin films with a self-organized columnar structure and their anti-Stokes photoluminescence properties [DOI]
• Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots [DOI]
• Photoelectrochemical Reaction in an Electric Cell with a Porous Carbon Anode [DOI]
• Wide-wavelength-range control of photoluminescence polarization in closely stacked inas/gaas quantum dots [DOI]
• Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure [DOI]
• Carrier collection efficiency of intraband-excited carriers in two-step photon up-conversion solar cells [DOI]
• Two-step photocurrent generation enhanced by the fundamental-state miniband formation in intermediate-band solar cells using a highly homogeneous InAs/GaAs quantum-dot superlattice [DOI] [Web of Scientce]
• Spatially resolved electronic structure of an isovalent nitrogen center in GaAs [DOI] [Web of Scientce]
• Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells [DOI] [Web of Scientce]
• Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells [DOI] [Web of Scientce]
• Two-step photon up-conversion solar cells [DOI] [Web of Scientce]
• Transverse-magnetic laser oscillation from highly stacked InAs/GaAs quantum dots
• Photocarrier transport dynamics in InAs/GaAs quantum dot superlattice solar cells using time-of-flight spectroscopy [DOI] [Web of Scientce]
• Polarization characteristics of electroluminescence and net modal gain in highly stacked InAs/GaAs quantum-dot laser devices [DOI] [Web of Scientce]
• Emission-wavelength tuning of InAs quantum dots grown on nitrogen-delta-doped GaAs(001) [DOI] [Web of Scientce]
• Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells [DOI] [Web of Scientce]
• Effects of rapid thermal annealing on two-dimensional delocalized electronic states of the epitaxial N delta-doped layer in GaAs [DOI] [Web of Scientce]
• Polarization anisotropy of electroluminescence and net-modal gain in highly stacked InAs/GaAs quantum-dot laser devices [Web of Scientce]
• Transverse-magnetic laser oscillation from highly stacked InAs/GaAs quantum dots [Web of Scientce]
• Two-Dimensional Energy Dispersion in Thermally Annealed Epitaxial Nitrogen Atomic Sheet in GaAs [Web of Scientce]
• GaAs first-spacer-layer thickness dependence of polarized photoluminescence properties of closely-stacked InAs/GaAs quantum dots with long-wavelength emission [Web of Scientce]
• Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature [DOI] [Web of Scientce]
• InAs/GaAs/Al_0.3Ga_0.7As 中間バンド型太陽電池における室温2段階光励起の飽和現象の解析 [DOI]
• 近接積層InAs/GaAs量子ドット半導体光アンプの光導波モード解析 [DOI]
• Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells [DOI] [Web of Scientce]
• Saturable Two-step Photo current Generation in Intermediate-band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells [Web of Scientce]
• Two-Step Photocarrier Generation in InAs/GaAs Quantum Dot Superlattice Intermediate Band Solar Cell [Web of Scientce] [DOI]
• Suppression of thermal carrier escape and enhanced two-step photon absorption in quantum-dot intermediate-band solar cells with a high-potential barrier [DOI] [Web of Scientce]
• Photoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAs
• Suppression of exciton-spin relaxation induced by artificial lateral quantum confinement in GaAs
• Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure [DOI] [Web of Scientce]
• Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots [DOI] [Web of Scientce]
• Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell [DOI]
• Fabrication of InAs Qantum Dots on Nitrided GaAs (001) Surface
• Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching [DOI] [PubMed]
• Application of photoreflectance to advanced multilayer structures for photovoltaics [DOI]
• Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth [DOI] [Web of Scientce]
• High-density and Sub-20-nm GaAs Nanodisk Array Fabricated Using Neutral Beam Etching Process for High Performance QDs Devices [DOI] [Web of Scientce]
• Optical absorption, photo-luminescence and miniband formation of a highly ordered and dense 2-dimensional array of Si nanodisks for quantum dot solar cells [DOI]
• Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications [DOI]
• Magnetotransport properties of Yb-doped AlxGa1-xAs/GaAs two-dimensional electron systems [DOI] [Web of Scientce]
• Time-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb-Irradiated Growth Interruption [DOI] [Web of Scientce]
• In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy [DOI] [Web of Scientce]
• GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction [DOI] [Web of Scientce]
• In situ determination of Sb distribution in Sb/GaAs(001) layer for high-density InAs quantum dot growth [DOI] [Web of Scientce]
• Modification of InAs quantum dot structure during annealing [DOI] [Web of Scientce]
• In-situ X-ray diffraction study of InAs/GaAs(001) quantum dot growth [DOI] [Othres link]
• Study of InAs/GaAs(001) nanoisland growth process by in-situ and real-time X-ray diffraction [DOI] [J-GLOBAL] [CiNii Research (CiNii Articles)]
• In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001) [DOI] [Web of Scientce]
• Controlled stacking growth of uniform InAs quantum dots by molecular beam epitaxy [DOI] [Web of Scientce]
• Self-Formation of Uniform InAs Quantum Dots and Quantum-Dot Chains
• Facet formation of uniform InAs quantum dots by molecular beam epitaxy [DOI] [J-GLOBAL] [Web of Scientce]
• Uniform formation of two-dimensional and three-dimensional InAs islands on GaAs by molecular beam epitaxy [DOI] [Web of Scientce]
• Uniform formation process of self-organized InAs quantum dots [DOI] [Web of Scientce]
• Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy [DOI] [J-GLOBAL] [Web of Scientce]
• Stranski-Krastanov growth of InAs quantum dots with narrow size distribution [DOI] [J-GLOBAL] [Web of Scientce]

その他業績

• バイオテンプレート極限加工による直径制御GaAsナノディスクの作製とその発光特性 [J-GLOBAL] [Othres link]
• トップダウン加工GaAsナノディスクにおけるキャリアスピン緩和 [J-GLOBAL]
• 単層InAs/GaAs量子ドット構造のDLTS評価 [J-GLOBAL]
• 原子状水素援用MBEによる2次元GaAsナノディスクアレイのGaAs/AlGaAsキャップ層再成長 [J-GLOBAL]
• バイオテンプレート極限加工によるGaAsナノディスクの作製と発光特性 [J-GLOBAL]
• 2次元Siナノディスクアレイにおけるミニバンド形成と電気伝導性の向上 [J-GLOBAL]
• 障壁材料としてSiCを用いたSi量子ナノディスクアレイ構造の電気・光学特性 [J-GLOBAL]
• 高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(3) [J-GLOBAL]
• シリコン(Si)ナノディスク2次元アレイによる高効率光吸収とバンドギャップエネルギー制御の実現 [J-GLOBAL]
• 高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(2) [J-GLOBAL]
• Ybドープ2次元電子系におけるYbトラップ準位の考察 [CiNii Research (CiNii Articles)] [CiNii Books] [J-GLOBAL]
• 高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定 [J-GLOBAL]
• YbドープAlGaAs/GaAs2次元電子系の電気伝導特性の励起エネルギー依存性 [CiNii Research (CiNii Articles)] [CiNii Books] [J-GLOBAL]
• YbドープAlGaAs/GaAsヘテロ構造の電気伝導特性の磁場依存性 [CiNii Research (CiNii Articles)] [CiNii Books] [J-GLOBAL]
• Ybドープ2次元電子系の強磁場電気伝導特性 [CiNii Research (CiNii Articles)] [CiNii Books] [J-GLOBAL]
• In-situ X-ray diffraction study on structural evolution of InAs islands on GaAs(001) during annealing [DOI] [Othres link]
• YbドープGaAs/AlGaAsヘテロ構造の発光,輸送特性 [CiNii Research (CiNii Articles)] [CiNii Books] [J-GLOBAL]
• 分子線エピタキシャル法による半導体ナノ構造成長のその場X線回折 [J-GLOBAL]
• Sb照射GaAs(001)表面のその場X線回折測定 [J-GLOBAL]
• リアルタイム計測:半導体ナノドット成長過程における構造変化 [J-GLOBAL]
• InAs/GaAs(001)成長のリアルタイムX線回折測定 [J-GLOBAL]
• その場X線回折による成長中継中のInAs量子ドットの構造変化の解析 [J-GLOBAL]
• InAs/GaAs(001)量子ドット成長のリアルタイムX線測定 [J-GLOBAL]
• 自己制限InAs量子ドットの構造安定性 [J-GLOBAL]
• 高密度・高均一InAs量子ドットの積層成長 [J-GLOBAL]
• GaAs埋め込みInAs量子ドットの1.3μm発光 [J-GLOBAL]
• 自己制限InAs量子ドット形成過程のInAs成長条件依存性 (2) [J-GLOBAL]
• 自己制限InAs量子ドット形成過程のInAs成長条件依存性 [J-GLOBAL]
• InAs量子ドットのサイズ自己制限過程 [J-GLOBAL]
• InAs2次元成長層のアニールによる3次元ドット形成 [J-GLOBAL]
• InAsアイランドサイズの形成位置依存性 [J-GLOBAL]
• 自己組織化InAsドットの初期形成過程 [J-GLOBAL]
• 自己制限InAs量子ドットのファセット形成過程 [J-GLOBAL]
• Narrow Size Distribution of Facet-Formed InAs Quantum Dots
• 自己組織化InAs量子ドットの低成長速度形成 [J-GLOBAL]
• 自己制限InAs量子ドットの形成過程 [J-GLOBAL]
• 自己組織化InAs量子ドットの高均一化 ドットサイズの自己制限効果 [CiNii Research (CiNii Articles)] [CiNii Books] [J-GLOBAL]
• 自己組織化InAs量子ドットの低As圧成長 [J-GLOBAL]
• 自己組織化InAs量子ドットサイズの自己制限効果(2) [J-GLOBAL]
• 自己組織化InAs量子ドットサイズの自己制限効果 [J-GLOBAL] [Othres link]
• 高均一InAs自己形成量子ドットの発光特性 [J-GLOBAL] [Othres link]

講演・口頭発表等

• One-Dimensional Electronic States in Highly-Stacked InAs/GaAs Quantum Dot Superlattices
• “Effects of GaAs-Capping Temperature on The Emission Wavelength of InAs Quantum Dots Grown on Nitrogen-Doped GaAs(001)Surfaces
• 多孔質炭素電極を用いた光化学電池の基礎特性
• Carrier Collection Efficiency of Intraband-Excited Carriers in Two-Step Photon Up-Conversion Solar Cells
• Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission
• One-Dimensional Electronic States in Closely Stacked InAs/GaAs Quantum Dots with Different Growth Temperatures
• Extraction Efficiency of Up-Converted Electrons in Two-Step Photon Up-Conversion Solar Cells
• Two-Step Photo-Excitated Electrons with Extremely-Long Lifetime in Intermedeate-band Solar Cells Using Dot-in Well Strucyure
• Infrared Absorption Characteristics in Two-Step Photon Up-Conversion Solar Cells
• Efficient Two-Step Photocurrent in Intermediate Band Solar Cells Using Highly Homogeneous InAs/GaAs Quantum-Dot Superlattice
• One-Dimensional Miniband Formation in InAs/GaAs Quantum Dot Superlattice
• Laser-induced Hydrogen Production Using Porous Carbon
• 低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における熱脱出の抑制
• 低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における2段階光吸収の増強
• Photon Up-Converted Photocurrent in a Single Junction Solar Cell with a Hetero-Interface
• Increasing Photovoltage Boosted by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-Interface
• Extended Optical Response of Two-Step Photoexcitation in InAs/GaAs Quantum-Dot Superlattice Intermediate Band Solar Cells
• Stokes and Anti-Stokes Photoluminescence in Nitrogen ð-Doped Layer in GaAs
• Increasing Current Generation by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-Interface
• Broadband Control of Polarization Characteristics in Closely-Stacked InAs/GaAs Quantum Dots
• GaAs中のエピタキシャル窒素膜における反ストークス発光
• GaAs中のデルタドーピング窒化層を利用した光によるフォノン制御
• Two-dimensional delocalized electronic states of epitaxial N d-doped layer in GaAs
• InAs/GaAs量子ドット中間バンド型太陽電池における電子の熱脱出過程の解明
• Control In-Ga Intermixing in InAs Quantum Dot on Nitrogen δ-Doped GaAs
• Spatial Electronic Structure of an Isovalent Nitrogen Center in GaAs
• Thermal carrier-escape process from the intermediate band in InAs/GaAs quantum dot solar cells
• Two-Dimensional Energy Dispersion in Thermally Annealed Epitaxial Nitrogen Atomic Sheet in GaAs
• Polarization Anisotropy of Electroluminescence and Net-Modal Gain in Highly Stacked InAs/GaAs Quantum-Dot Laser Devices
• GaAs First-Spacer-Layer Thickness Dependence of Polarized Photoluminescence Properties of Closely-Stacked InAs/GaAs Quantum Dots with Long-Wavelength Emission
• Extended Electron Lifetime in Intermediate-Band Solar Cells Using Dot-in-Well Structure
• Enhancement of Two-Step Photon Absorption Due to Miniband Formation in InAs/GaAs Quantum Dot Superlattice Solar Cell
• 急速熱アニールしたGaAs中のエピタキシャル窒素膜の輻射再結合寿命
• Time-Resolved Photoluminescence of Thermally-Annealed Nitrogen Atomic Sheet in GaAs
• Polarized Photoluminescence Properties of Closely-Stacked InAs/GaAs Quantum Dots with Long-Wavelength Emission
• InAs/GaAs量子ドット超格子太陽電池におけるミニバンド形成が2段階光吸収に与える影響
• Extremely Long Carrier Lifetime Due to Electron-Hole Separation in Quantum-Dot Intermediate-Band Solar Cells
• InAs/GaAs量子ドット超格子を利用したホットキャリア型太陽電池
• Epitaxial Nitrogen Atomic Sheet in GaAs Grown by Nitorogen δ-Doping Technique
• 急速熱アニールによるGaAs中のエピタキシャル窒素シートにおける2次元物性の制御
• Enhancement of Two Dimensionality in Epitaxial Nitrogen Atomic Sheet in GaAs by Rapid Thermal Annealing
• Broadband Control of Emission Wavelength of InAs/GaAs Quantum Dots by Growth Temperature GaAs Capping Layer
• Annealing effects on the delocalized electronic states of epitaxial two-dimensional nitrogen atomic sheet in GaAs
• Two-Step Photocarrier Generation in InAs/GaAs Quantum Dot Superlattice Intermediate Band Solar Cell
• Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells
• GaAs中のエピタキシャル二次元窒素膜におけるアニール効果
• GaAs中のエピタキシャル2次元窒素シート非局在電子状態の発光ダイナミクス
• Two-dimensional electronic states of epitaxial nitrogen atomic sheet in GaAs
• Suppression of Thermal Carrier Escape and Efficient Photo-Carrier Generation by Two-Step Photon Absorption in Intermediate-Band Solar Cells Using a Dot-in-Well Structure
• Photoluminescence Decay Dynamics in Epitaxial Two-Dimensional Nitrogen Atomic Sheet in GaAs
• Modulation of Photoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAs
• Photoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAs
• GaAs中のエピタキシャル二次元窒素膜の電子状態 (II)
• GaAs中のエピタキシャル二次元窒素膜における発光ダイナミクス
• Enhancement of interaction among nitrogen pair centers in epitaxial two-dimensional nitrogen atomic sheet in GaAs
• Structural Modification of InAs Quantum Dots Grown on Nitrided GaAs(001)Surface
• 窒素δドープGaAs(001)層上のInAs量子ドット自己形成
• InAs/GaAs量子ドット太陽電池の量子準位を介した２段階光吸収
• InAs/AlxGa1-xAs量子ドットにおけるキャリアの熱活性特性
• Fabrication of InAs Quantum Dots on Nitrided GaAs (001) Surface
• Photoluminescence Properties of Height-controlled GaAs Nanodisks Fabricated by Neutral Beam Etching
• 中性粒子ビームエッチングにより作製したGaAsナノディスクのPL特性のディスク高さ依存性
• トップダウン加工GaAsナノディスクにおけるキャリアスピン緩和
• 単層InAs/GaAs量子ドット構造のDLTS評価
• 原子状水素援用MBEによる2次元GaAsナノディスクアレイのGaAs/AlGaAsキャップ層再成長
• バイオテンプレート極限加工によるGaAsナノディスクの作製と発光特性
• Observation of photo- luminescence from 2-dimentional GaAs nanodisk array regrown by atomic hydrogen-assisted molecular beam epitaxy
• 2次元Siナノディスクアレイにおけるミニバンド形成と電気伝導性の向上
• High-density and Sub-20-nm GaAs Nanodisk Array Fabricated Using Neutral Beam Etching Process for High Performance QDs Devices
• バイオテンプレート極限加工によるGaAs 量子ナノディスク構造の制御
• 障壁材料としてSiCを用いたSi量子ナノディスクアレイ構造の電気・光学特性
• Fabrication of Two-dimensional Array of Sub-10nm GaAs Nanodisk by Combination of Bio-template and Neutral Beam Etching
• Optical Absorption, Photo-Luminescence and Miniband Formation of a Highly Ordered and Dense 2-Dimensional Array of Si Nanodisks for Quantum Dot Solar Cells
• Damage-free Top-down Processes of Fabricating Two-dimensional Array of Sub-10nm Nanometer GaAs Nanodisks using Bio-template and Neutral Beam Etching for Intermediate Band Solar Cell Applications
• 高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(3)
• シリコン(Si)ナノディスク2次元アレイによる高効率光吸収とバンドギャップエネルギー制御の実現
• 高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(2)
• Ybドープ2次元電子系におけるYbトラップ準位の考察
• Real-time X-ray diffraction measurements during Sb-mediated SK growth and annealing of InAs quantum dots
• Magnetotransport properties of Ytterbium doped AlxGa1-xAs/GaAs two-dimensional electron system

書籍等出版物

作品等

共同研究・競争的資金等の研究課題

• 窒素デルタドープによるGaAs基板上InAs量子ドット発光の1.5μm帯長波長化
• 未踏光周波数帯域を開拓する広帯域偏波無依存光アンプ基盤技術の構築

メディア報道

産業財産権

所属学協会

• 応用物理学会

委員歴

担当経験のある科目

• 先端融合科学特論Ⅰ－７a スマート物質・材料工学
• Advanced Science and TechnologyI-7a

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