学位

• 博士（工学）(早稲田大学)

経歴

学歴

受賞

• AVS Dorothy M. and Earl S. Hoffman Travel Grant
• ACS Appl. Energy. Mat. Cover art
• Marquis Who's Who in the World and Marquis Who's Who in America
• AVS Dorothy M. and Earl S. Hoffman Travel Grant
• Marquis Who's Who in the World and Marquis Who's Who in America
• Reconocimiento
• AVS Dorothy M. and Earl S. Hoffman Travel Grant
• AVS Dorothy M. and Earl S. Hoffman Travel Grant
• Marquis Who's Who in the World and Marquis Who's Who in America
• APEX/JJAP Editorial Contribution Award
• Graduate Student Sessionm Best presentation Award
• Marquis Who's Who in the World and Marquis Who's Who in America
• The best presentation awards, 2nd place (SPM-5, The 5th International Workshop on Solution Plasma and Molecular Technologies)
• Marquis Who's Who in the World and Marquis Who's Who in America
• APEX/JJAP Editorial Contribution Award
• 応用物理学会感謝状
• Marquis Who's Who in the World and Marquis Who's Who in America
• Marquis Who's Who in the World and Marquis Who's Who in America
• 第３０回財団賞・研究奨励金・共同研究奨励金
• Marquis Who's Who in the World and Marquis Who's Who in America
• 日本表面科学会講演奨励賞
• Marquis Who's Who in the World and Marquis Who's Who in America
• 平成２２年度電気通信大学優秀教員賞
• Marquis Who's Who in the World and Marquis Who's Who in America
• Young Scientist Awards
• Marquis Who's Who in the World and Marquis Who's Who in America
• Young Scientist Awards
• 講演奨励賞
• Marquis Who's Who in the World and Marquis Who's Who in America
• Young Scientist Awards
• 25th Silver Anniversary Edtion of Marquis Who's Who in the World
• Young Scientist Awards
• 日本MRS奨励賞
• 早稲田大学大隈記念奨学生
• 早稲田大学大隈記念奨学生

その他

論文

• Visualization of the local dipole moment at the Si(111) surface using DFT calculations [DOI]
• B-Doped Fullerene as a Potential Metal-Free Catalyst Material for CO Reduction Reaction [DOI]
• First-principles study on edge–edge interactions of bilayer zigzag SiC nanoribbons [DOI]
• A Functional N/S-doped Carbon Electrode from a Carbonized Bagasse Activated with Water Vapor [DOI] [Othres link] [Othres link]
• Atomic structure of the Se-passivated GaAs(001) surface revisited [DOI] [Othres link] [Othres link]
• Hydrogen storage on tin carbide monolayers with transition metal adatoms [DOI] [Othres link]
• ナノスケールのチューリング・パターン [DOI]
• Theoretical prediction of two-dimensional II-V compounds [DOI] [Web of Scientce]
• Tunable electronic properties of silicon nanowires as sodium-battery anodes [DOI]
• Size optimization of a N-doped graphene nanocluster for the oxygen reduction reaction [DOI]
• Pyrolysis-Free Oxygen Reduction Reaction (ORR) Electrocatalysts Composed of Unimolecular Layer Metal Azaphthalocyanines Adsorbed onto Carbon Materials [DOI] [Scopus] [Scopus]
• Ab initio study of hydrogen storage on metal-decorated GeC monolayers [DOI]
• Edge-State-Induced Stacking of Zigzag Graphene Nanoribbons [DOI]
• Fe azaphthalocyanine unimolecular layers (Fe AzULs) on carbon nanotubes for realizing highly active oxygen reduction reaction (ORR) catalytic electrodes [DOI] [Scopus] [Scopus]
• 典型的な二元系化合物半導体の新しい超薄膜構造
• Oxygen reduction reaction mechanism of N-doped graphene nanoribbons [DOI] [Othres link]
• Effect of Water on the Manifestation of the Reaction Selectivity of Nitrogen-Doped Graphene Nanoclusters toward Oxygen Reduction Reaction [DOI]
• Solution plasma reactions and materials synthesis [DOI] [Othres link]
• Atomic structure and passivated nature of the Se-treated GaAs(111)B surface [DOI] [Othres link]
• Softly-confined water cluster between freestanding graphene sheets [DOI]
• Plasma in Solution and Its Applications [DOI] [Scopus] [Scopus]
• Structural stability and aromaticity of pristine and doped graphene nanoflakes [DOI] [Web of Scientce] [Othres link]
• 二次元原子層シートの磁性 [DOI] [CiNii Research (CiNii Articles)]
• Formation of Water Layers on Graphene Surfaces [DOI] [Othres link]
• Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters [DOI]
• Mechanism of stabilization and magnetization of impurity-doped zigzag graphene nanoribbons [DOI] [Web of Scientce] [Othres link]
• Anomalous enhancement of Seebeck coefficients of the graphene/hexagonal boron nitride composites [DOI] [Web of Scientce] [Othres link]
• First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2 x 2) surface [DOI] [Web of Scientce] [Othres link]
• グラファイト／グラフェン表面上の水の濡れ性 [DOI] [CiNii Research (CiNii Articles)] [Othres link]
• Mn-Induced Surface Reconstructions on GaAs(001) [DOI] [Web of Scientce] [Othres link]
• Anomalous Stabilization in Nitrogen-Doped Graphene [DOI] [Web of Scientce] [Othres link]
• グラフェンおよびグラフェンナノリボンのバリスティックフォノン熱伝導 [DOI] [CiNii Research (CiNii Articles)]
• ソリューションプラズマによる新規物質合成 [DOI] [CiNii Research (CiNii Articles)] [Othres link]
• Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions [DOI] [Web of Scientce] [Othres link]
• Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)-c(4 × 4)α surfaces [DOI] [Scopus] [Scopus]
• Giant Seebeck coefficient of the graphene/h-BN superlattices [DOI] [Web of Scientce] [Othres link]
• Ballistic phonon thermal conductance in graphene nano-ribbons [DOI] [Othres link]
• Erratum: Controlled incorporation of Mn in GaAs: Role of surface reconstructions [DOI] [Web of Scientce]
• Controlled incorporation of Mn in GaAs: Role of surface reconstructions (vol 87, 165301, 2013) [DOI] [Web of Scientce] [Othres link]
• Magnetic properties of a single molecular layer of MnAs on GaAs(110) [DOI] [Othres link]
• 教育の質保証評価ツールとしてのカリキュラムマップ [CiNii Research (CiNii Articles)] [Othres link]
• Controlled incorporation of Mn in GaAs: Role of surface reconstructions [DOI] [Othres link]
• Ballistic phonon thermal conductance in Graphene Nano-Ribbon: First-principles calculations [DOI] [Web of Scientce]
• カーボン系物質の熱伝導特性 [DOI] [CiNii Research (CiNii Articles)] [Othres link]
• 酸化グラフェンの応用
• 応用物理学会人材育成・男女共同参画委員会における若手問題への取り組み
• First-principles Calculations of the Dielectric Constant for the GeO2 Films [DOI] [Web of Scientce]
• D- centers in uniaxially stressed Si and in Si/SiO2 quantum wells [DOI] [Othres link]
• 応用物理分野のアカデミック・ロードマップ「人材育成」 [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link]
• Conductivity and dielectric constant of nanotube/polymer composites [DOI] [Web of Scientce] [Othres link]
• Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges [DOI] [Web of Scientce]
• The anisotropy of ac conductivity and dielectric constant of anisotropic conductor–insulator composites [DOI] [Othres link]
• ac conductivity and dielectric constant of nanotube polymer composites
• Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges [DOI]
• Dielectric properties of GeO2 ultrathin films
• Variable stoichiometry in Sb-induced (2×4) reconstructions on GaAs(001) [DOI] [Web of Scientce] [Othres link]
• Control mechanism of friction by dynamic actuation of nanometer-sized contacts [DOI] [Web of Scientce] [Othres link]
• GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
• Structural and electronic properties of carbon nanotubes consisting of nanoribbon-walls with arrayed-oxygen hinges
• Ballistic thermal conductance of electrons in graphene ribbons [DOI] [Web of Scientce] [Othres link]
• Dielectric constant profiles of the thin-films: alpha- and beta-quartz phases of (Si or Ge) dioxides
• In-plane strain effects on dielectric properties of the HfO2 thin film [DOI] [Web of Scientce] [Othres link]
• Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110) [DOI] [Web of Scientce] [Othres link]
• 酸化プロセスによるグラフェンナノリボンの作製 [DOI] [CiNii Research (CiNii Articles)] [Othres link]
• Structural and electronic properties of the planar C-skeleton polymers [DOI] [Web of Scientce] [Othres link]
• Band-bending effects on scanning tunneling microscope images of subsurface dopants: First-principles calculations [DOI] [Web of Scientce] [Othres link]
• Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field [DOI] [Web of Scientce] [Othres link]
• Structural stability and cohesive properties of the oxygen-adsorbed graphene
• Dielectric properties of the ultra-thin La2O3(0001) film
• Conductivity and dielectric constant of anisotropic CNT/polymer composites
• Half-metallic ground states of Mn atomic wires on GaAs(110)
• First-principles evaluation of the polytype-dependence of the local dielectric constant for SiC
• Size effects in friction of multiatomic sliding contacts [DOI] [Web of Scientce]
• Dielectric discontinuity at surfaces and interfaces: a first-principles approach
• Semiconducting nature of the oxygen-adsorbed graphene sheet [DOI] [Web of Scientce]
• Negative donors in multivalley semiconductors: Diffusion quantum Monte Carlo simulations [DOI] [Web of Scientce]
• Structural bistability of the oxygen-adsorbed graphene sheet [DOI] [Web of Scientce]
• Atomic scale dielectric constant near the SiO2 /Si (001) interface [DOI] [Othres link]
• Ballistic thermal conductance of a graphene sheet [DOI] [Web of Scientce]
• Mechanism of velocity saturation of atomic friction force and dynamic superlubricity at torsional resonance [DOI] [Web of Scientce]
• Simulations of scanning Tunneling Microscopy for B-/P-doped Si(111) surfaces [DOI] [Web of Scientce]
• Dielectric properties of the interface between Si and SiO2 [DOI] [Web of Scientce]
• First-principles evaluations of dielectric properties from nano-scale points of view [DOI]
• Dielectric discontinuity at a twin boundary in Si(111) [Web of Scientce]
• Charge correlation and spin coupling in double quantum dots [Web of Scientce]
• Nano-scale profile of the dielectric constant near the Si/oxide interface: A first-principles approach [DOI]
• First-principles evaluations of dielectric constants for ultra-thin semiconducting films
• ac conductivity and dielectric constant of conductor-insulator composites [DOI] [Web of Scientce]
• Charge correlation and spin coupling in double quantum dots: A quantum diffusion Monte Carlo study [DOI] [Web of Scientce]
• First-principles calculations of dielectric constants for ultrathin Sio(2) films [DOI] [Web of Scientce]
• Structural stabilities and electronic properties for planar Si compounds [DOI]
• Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures (vol 72, art no 235415, 2005) [DOI] [Web of Scientce]
• Dielectric properties of hydrogen-terminated Si(111) ultrathin films [DOI] [Web of Scientce]
• First-principles evaluations of dielectric constants [Web of Scientce]
• Dielectric discontinuity at structural boundaries in Si [DOI]
• Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures [DOI] [Web of Scientce]
• Electronic and magnetic properties of BNC ribbons [DOI] [Web of Scientce]
• Friction in atomic scale
• 半導体超薄膜の誘電特性
• Two types of surface atomic structures for As-rich GaAs(001)-c(4x4)
• Electronic and magnetic properties of BNC ribbons
• Spatial variation in dielectric constant at surfaces of hydrogen-terminated ultra-thin Si(111) films
• Structural stability of Si(001) and Ge(001) in external electric fields [DOI] [Web of Scientce]
• 若手・女性研究者の研究環境 [DOI] [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link] [Othres link]
• Energy barrier for dimer flipping at the Si(001)-(2x1) surface in external electric fields [DOI] [Web of Scientce]
• Energy barrier for dimer flipping at the Si(001)-2 x 1 surface in external electrostatic fields [Web of Scientce]
• Dielectric properties of ultra-thin films [Web of Scientce]
• Ge/Si(113)-(2x2) surfaces: structural features induced by self-interstitial atoms
• Ga-As dimer structure for the GaAs(001)-c(4x4) surface [DOI] [Web of Scientce]
• Atomic scale friction of nanoscale clusters
• Kinetics in surface reconstructions on GaAs(001) [DOI] [Web of Scientce]
• First-principles study on the atomic and electronic structures of the Au/Si(111)-alpha(Sqrt3xSqrt3)R30 surface
• Direct observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces
• Band discontinuity at ultrathin SiO2/Si(001) interfaces [DOI] [Web of Scientce]
• Ge/Si(113)-2x2表面の構造安定性と応力異方性
• 極薄SiO2/Si界面のエネルギー障壁の第一原理計算
• Dynamics of c(4 x 2) phase-transition in Si(100) surfaces [DOI] [Web of Scientce]
• Structural stability of the Ge/Si(113)-2 x 2 surface [DOI] [Web of Scientce]
• Au/InSb(111)A系における合金形成過程 [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link]
• New structure model for the GaAs(001)-c(4x4) surface
• Atomic structures of the Ge/Si(113)-(2X2) surface [DOI] [Web of Scientce]
• New Structure Model for the [Formula presented] Surface [DOI]
• Theoretical study on the structural phase transition of Si(111)root 3 x root 3-Ag surface [Web of Scientce]
• STM images apparently corresponding to a stable structure: Considerable fluctuation of a phase boundary of the Si(111)-(root 3 x root 3)-Ag surface [DOI] [Web of Scientce]
• Surface structures of GaAs{111}A,B-(2 × 2) [Othres link]
• Structural and cohesive properties of a C-60 monolayer [DOI] [Web of Scientce]
• Surface structures of GaAs{111}A,B-(2X2) [Web of Scientce]
• Structural stability and electronic states of gold nanowires [Web of Scientce]
• Anisotropic electronic structure of the Si(111)-(4x1)In surface [Web of Scientce]
• Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A [Web of Scientce]
• Surface structures of (formula presented) [DOI]
• Electronic states and structural stability of gold nanowires
• Structural and electronic properties of two-dimensional C60
• Structural ordering on Si(111)root 3 x root 3-Ag surface: Monte Carlo simulation based on first-principles calculations [Web of Scientce]
• Strain relaxation in InAs/GaAs(111)A heteroepitaxy [Web of Scientce]
• Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy [Web of Scientce]
• Atomic and electronic structure of the Si(111)-Sqrt(3)×Sqrt(3)-Ag surface re-examined by using first-principles calculation [DOI] [Web of Scientce]
• Photoinduced products in a C-60 monolayer on Si(111)(root 3x root 3)-Ag: An STM study [Web of Scientce]
• Structure and electronic states for a single strand of gold atoms
• Chemical bonding features for faultily stacked interfaces of GaAs{111} [Web of Scientce]
• Direct imaging of the evolving Au/InSb(III) B interface [Web of Scientce]
• Structure of the InSb(111)A-(2 root 3x2 root 3)-R30 degrees surface and its dynamical formation processes [Web of Scientce]
• Structure and electronic states of the alpha-Sn(111)-(2x2) surface [Web of Scientce]
• Reflection high-energy electron diffraction analysis of the InSb{111}A,B-(2x2) surfaces [Web of Scientce]
• Nucleation of Au on KCl(001) [Web of Scientce]
• Structural stability and its electronic origin of the GaAs(111)A-2x2 surface [Web of Scientce]
• s-character of MX4 (M=C, Si, Ge, X=F, Cl, Br, I) molecules [Web of Scientce]
• Initial growth processes of Ag on polar and non-polar semiconductor substrates [Web of Scientce]
• Geometry and lattice formation of surface layers of Sn growing on InSb{111}A,B [Web of Scientce]
• Surfactant-induced bond strengthening in As-grown film surfaces [Web of Scientce]
• Geometry and lattice formation of surface layers of Sn growing on InSb(111)\\A, B [DOI] [Othres link]
• INHOMOGENEOUS CHARGE-TRANSFER IN AN INCOMMENSURATE SYSTEM [Web of Scientce]

その他業績

• オゾンの効率的な生成を促す局所原子配列
• Plasma in Solution and Its Applications FOREWORD [DOI] [Web of Scientce]
• 26pPSB-36 Mn吸着(2×2)-GaAs(001)表面構造および電子状態(26pPSB 領域9ポスターセッション,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 23pPSB-7 GaAs(001)-(2×2)Mn表面の原子配列と電子状態評価(23pPSB 領域9ポスターセッション,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 23aWS-9 Sb安定化GaSb(001)-(2x5)表面の原子配列(23aWS 表面界面構造(半導体),領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 21aGL-7 HfO_2・SiO_2薄膜における酸素欠損近傍の局所誘電率評価(21aGL 表面界面電子物性,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 21aHW-4 Si/SiO_2量子井戸内D-イオン束縛エネルギーの井戸幅依存性 : valley-orbit相互作用効果(21aHW 量子井戸・超格子・光応答,領域4(半導体,メゾスコピック系・局在)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 22pGL-5 GaAs(110)表面上のMnAs単分子層膜の磁性(22pGL 領域3,領域9合同 表面・界面磁性,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 23aXB-1 GaAs(001)-(2×4)-Sb吸着構造の再検討(23aXB 表面界面構造,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 20aXA-14 GaAs(110)表面上のGa置換Mnナノワイヤの原子配置とスピン・電子状態(20aXA 領域9,領域3合同 表面磁性,領域3(磁性,磁気共鳴)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 22pTA-12 グラフェンリボンのバリスティック熱コンダクタンス(22pTA 領域7,領域4合同 グラフェン・電子物性,領域7(分子性固体・有機導体)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 25pWF-11 ナノスケールの摩擦機構 : ティップサイズ効果(粉体・摩擦・地震,領域11,統計力学,物性基礎論,応用数学,力学,流体物理) [CiNii Research (CiNii Articles)] [CiNii Books]
• 26pTD-9 不純物ドープSi(111)表面のSTM像の第一原理計算II : STM像の不純物原子種依存性(表面界面電子物性,領域9,表面・界面,結晶成長) [CiNii Research (CiNii Articles)] [CiNii Books]
• 25pTD-3 SiO_2/Si(001)界面におけるナノスケール誘電特性の第一原理計算(表面界面電子物性,領域9,表面・界面,結晶成長) [CiNii Research (CiNii Articles)] [CiNii Books]
• 22aPS-124 グラフェンのバリスティック熱伝導特性(領域4ポスターセッション,領域4,半導体,メゾスコピック系・局在) [CiNii Research (CiNii Articles)] [CiNii Books]
• 21aTG-9 酸素吸着グラフェンの構造双安定性の第一原理計算(ナノチューブ・ナノワイヤー,表面界面構造,領域9,表面・界面,結晶成長) [CiNii Research (CiNii Articles)] [CiNii Books]
• 18pTG-9 第一原理計算によるSiO_2/Si(001)界面のナノスケール誘電特性評価(表面界面電子物性,領域9,表面・界面,結晶成長) [CiNii Research (CiNii Articles)] [CiNii Books]
• 18pTG-10 不純物ドープSi(111)表面のSTM像の第一原理計算(表面界面電子物性,領域9,表面・界面,結晶成長) [CiNii Research (CiNii Articles)] [CiNii Books]
• 18pWH-4 有限温度原子レベル摩擦機構 : 1次元Tomlinsonモデルによる解析(領域9,領域10合同シンポジウム ナノスコピック系の摩擦の物理:摩擦の素過程と制御,領域9,表面・界面,結晶成長) [CiNii Research (CiNii Articles)] [CiNii Books]
• 23pYH-3 原子摩擦力の速度飽和機構(23pYH 表面界面ダイナミクス,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 29pXB-13 縦型2重量子ドットのスピン結合と磁場制御(29pXB 量子ドット,領域4(半導体,メゾスコピック系・局在)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 29pXJ-1 Si(111)双晶境界近傍の局所的誘電率変化(29pXJ 表面界面電子物性,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 21aPS-51 原子レベルの摩擦機構(領域9ポスターセッション,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 21pYE-7 SiC多形超薄膜の誘電特性(表面・界面電子物性,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 20aYE-7 SiO_2超薄膜の誘電特性(表面ナノ構造量子物性,ナノチューブ・ナノワイヤ,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 22pYE-3 グラフェンシートの酸素吸着と拡散過程の第一原理計算(表面界面構造,領域9(表面・界面,結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 27aXD-9 BNリボンの磁性II(ナノワイヤ・ナノチューブ,領域9(表面・界面, 結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 24aPS-145 2次元シリコン化合物の原子構造と電子状態(表面・界面, 結晶成長,領域9(表面・界面, 結晶成長)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 15pXG-14 Si(001)-2×1 ダイマー表面におけるフリップフロップ運動の外部電場依存性(表面界面構造 : 半導体, 領域 9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 15aPS-9 超微粒子分散媒質の高周波電気伝導特性(領域 9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 15aPS-10 ヘテロ基板上原子クラスタのマジックサイズと摩擦(領域 9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 15pXG-4 As 安定化 GaAs(001)-c(4×4) 表面における安定および準安定構造(表面界面構造 : 半導体, 領域 9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 15aPS-81 BN リボンの磁性(領域 9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 14aXG-3 Si 超薄膜の誘電特性 II(表面界面電子物性, 領域 9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 29pYA-7 2重量子ドットのスピン結合(量子ドット(伝導理論・スピン効果・量子リング))(領域4) [CiNii Research (CiNii Articles)] [CiNii Books]
• 30aWP-5 Si超薄膜の誘電特性(ナノ構造量子物性)(領域9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 28pWP-3 第一原理計算によるAu/Si(111)-α(√<3>×√<3>)表面構造の研究(表面界面構造(半導体))(領域9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 20aPS-20 超薄膜の外部静電場応答特性の第一原理的評価 [CiNii Research (CiNii Articles)] [CiNii Books]
• 28pPSB-27 GaAs(001)-c(4x4) 表面上における Ga-As dimer の欠陥構造 [CiNii Research (CiNii Articles)] [CiNii Books]
• 30pZP-11 2 重量子ドットのスピン結合制御 [CiNii Research (CiNii Articles)] [CiNii Books]
• 31aWD-8 Ge/Si(113)-2×2 表面の応力異方性 [CiNii Research (CiNii Articles)] [CiNii Books]
• 7aSM-1 GaAs(001)-c(4×4)表面に対する新たな構造モデルの提唱(表面界面構造・電子物性,領域9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 7aSP-10 SiO2超薄膜のトンネル特性(表面ナノ構造量子物性,領域9) [CiNii Research (CiNii Articles)] [CiNii Books]
• 25pPSB-60 不均一表面層の2端子間2次元電流分布(25pPSB 表面界面・結晶成長,領域9(表面・界面,結晶成長分野)) [CiNii Research (CiNii Articles)] [CiNii Books]
• 25pPSB-43 Si(100)面のダイマーバックリングダイナミクス(25pPSB 表面界面・結晶成長,領域9(表面・界面,結晶成長分野)) [CiNii Research (CiNii Articles)] [CiNii Books]
• As安定化GaAs(001)-c(4x4)表面に対する新たな構造モデル [J-GLOBAL]
• 19pPSB-38 Ge/Si(113)-2x2表面の構造安定性 [CiNii Research (CiNii Articles)] [CiNii Books]
• 22aBA-2 閉核イオン・原子の多重極分極率 [CiNii Research (CiNii Articles)] [CiNii Books]
• 6p-B-11 α-Sn(111)-(2x2)表面の構造と電子状態II [CiNii Research (CiNii Articles)] [CiNii Books]
• 5a-H-11 α-Sn(111)-(2×2)表面の構造と電子状態I [CiNii Research (CiNii Articles)] [CiNii Books]
• RHEEDロッキングカーブを用いたSi(111)√3×√3R30°-Au表面の構造解析 [CiNii Research (CiNii Articles)] [CiNii Books]
• 30a-PS-29 RHEED rocking curveを用いたInSb{111}A, B表面の構造解析 [CiNii Research (CiNii Articles)] [CiNii Books]

講演・口頭発表等

• Materials design of non-precious metal catalysts for CO reduction
• Simulation for the in-plane surface dipole moment distribution of the Si surface using DFT calculations
• Visualization of the Surface Dipole Moment at the Si(111) Surfaces Using First-Principles Calculations
• Role of Computational Simulations in Materials Science and Atomic-Level Materials Design
• 第一原理計算を用いたSi(111)-(7x7)表面における表面双極子の可視化
• Structure and stability of the Se-treated GaAs(001) surface
• Electronic and optical properties of graphane
• Designing the properties and functions of materials at an atomic level
• A simulation for the in-plane distribution of the surface dipole moment using DFT calculations (S7-2)
• Edge-Driven Electronic Properties in Bilayer Zigzag SiC Nanoribbons: A First-Principles Study (S4-61)
• B-doped fullerene: a high-performance electrocatalyst for the CO reduction reaction (S4-53)
• Visualization of the Local Dipole Moment at the Si(111)-(2x2) Surface Using DFT Calculations
• 第一原理計算を用いたSi(111)-(2x2)表面における表面双極子の可視化
• Hydrogen storage on tin carbide monolayers with transition metal adatoms
• Structural stability and electronic states of AA and AB stacked II-V compounds
• Effects of doping and vacancies in the electronic properties of the SiC monolayer: A DFT approach
• Structural stability of 2D II-V compounds
• Size Dependence of the N-Doped Graphene Nanocluster on the Oxygen Reduction Reaction Activity
• Effects of substrates on Oxygen Reduction Reaction of Nitrogen-doped Graphene
• B-doped Fullerene as A Novel Monoatomic Catalyst Material for CO Reduction Reaction
• Theoretical prediction of novel two-dimensional II-V compounds
• Effects of Spin-Orbit Interaction on Mn Atomic Wire on GaAs(110)
• Thermodynamical Stability of 2D sp2/sp3 N-doped Carbon Materials
• First-principles Study on Edge-edge Interactions of Bilayer Zigzag SiC Nanoribbons
• SnドープSnxSr1-xTiO3の構造相転移メカニズムの第一原理的解析
• Carbonaceous material derived from bagasse-waste as anode for Li-ion batteries
• Structural stability of II-V compound ultrathin films
• Stacking effect on oxygen reduction reaction of nitrogen-doped graphene
• Edge-edge interactions of bilayer zigzag SiC nanoribbons
• コバルトフタロシアニン分子の一酸化炭素還元触媒能：誘導体化の影響
• Derivatization Effect of Cobalt Phthalocyanine on the Catalytic Activity for Carbon Monoxide Reduction
• Theoretical study of li-decorated b-doped silicon carbide monolayer for hydrogen storage
• Structural stability of 2D II-V compounds
• Interaction between the edge states of bilayer zigzag SiC nanoribbons
• コバルトフタロシアニンの誘導体化が一酸化炭素還元触媒能に及ぼす影響
• 有限電場下の第一原理計算による局所誘電率評価の試み
• Hydrogen Storage on Metal Decorated GeC Monolayer
• 2D II-V compounds: A mechanism of structural stabilization
• Derivatization effect of Metal Phthalocyanine on the catalytic activity for carbon monoxide reduction
• Oxygen Reduction Reaction Activity of Nitrogen-Doped Graphene with a Stone-Wales Defect
• Stacking effect of double-layered zigzag graphene nanoribbons
• 窒素ドープグラフェンナノクラスターの酸素還元反応における触媒性 : 最適なクラスターサイズの提案
• SnxSr1-xTiO3の相転移と局所構造
• Oxygen reduction reaction for Fe phthalocyanine derivative
• Edge-edge interaction in bilayer zigzag graphene nanoribbons
• Structural stability of twisted bilayer graphene nano ribbons
• Chalcogen passivation of GaAs(111)B surfaces
• Mechanism of chalcogen passivation of GaAs surfaces
• Structural stability of graphene nanoflakes: From the view point of aromaticity
• Structural stability of graphene nanoflakes: from the view point of aromaticity
• 鉄フタロシアニンの誘導体化による酸素還元反応の高活性化メカニズム
• Edge-state-induced stacking of zigzag graphene nano-ribbons
• Bi-layer formation of water on graphene
• Functionalization of graphene by N doping: Application to the oxygen reduction reaction
• Chalcogen passivation of GaAs(111)B surfaces [Othres link]
• Water wettability of graphene
• Actividad catalítica del grafeno dopado con boro para reacciones de reducción de oxígeno
• 窒素ドープグラフェンナノリボンにおける酸素還元反応
• Oxygen Reduction Reaction on Fullerene
• Structural stability of the Se- or S-treated GaAs (111) B surface
• GaAs(111)B表面構造の分子分圧依存性
• カルコゲンによるGaAs表面の不働態化機構
• Oxygen Reduction Reaction Mechanism for N-doped Graphene Nanoribbons
• グラフェンは疎水性か？
• 窒素ドープグラフェンナノクラスターの酸素還元反応に対する触媒性
• グラフェンは疎水性か？
• Oxygen reduction reaction activity for N-doped graphene nanoclusters
• Structural stability of the Se- or S-treated GaAs (111) B surface
• Systematic evaluation of the structural stability of nitrogen-doped graphene
• Oxygen Reduction Reaction on fullerene
• Na- and Be-decorated silicon carbide monolayer for H2 storage: a DFT study
• Edge-state-induced stacking of zigzag graphene nano-ribbons
• Double Layer Formation of Water Molecules on Graphene
• Stabilization Mechanism of the Se- or S-treated GaAs(111)B Surface
• Oxygen Reduction Reaction on Fullerene
• 窒素ドープグラフェンのベーサル面における酸素還元反応
• 窒素ドープグラフェンの構造安定性の系統的評価
• ２層ジグザググラフェンナノリボンのエッジ状態間相互作用
• 酸素還元反応におけるフラーレンの触媒性
• S処理された GaAs(111)B 表面の構造安定性
• Formation of Water Layer on Graphene Surfaces [Othres link]
• Water layer formation on graphene
• Edge-state-induced stacking of zigzag graphene nano-ribbons
• Systematic evaluation of the structural stability of N-doped graphene
• Intra- and inter-layer magnetic interactions in a van der Waals crystal
• Se 処理された GaAs(111)B 表面の構造安定性
• Intra- and inter-layer magnetic interactions in a van der Waals crystal
• LiMO2(M=Mn,Co,Ni)の熱力学的安定性および磁気的特性の第一原理計算による評価
• Structural stability of the Se-treated GaAs(111)B surface
• 窒素ドープグラフェン上の酸素還元反応の窒素配位依存性
• 窒素ドープグラフェンの構造安定性に局所的窒素配列が及ぼす影響
• InGaN混晶中におけるIn-In相互作用
• Effect s of Edge Structures on the Oxygen Reduction Reaction Activity of Nitrogen-doped Graphene Nanoribbons
• Quantitative Relation between the Structural Stability and the Aromaticity of Graphene Nanoflakes
• Formation of Water Bilayer on Graphene Surfaces
• Structural stability of the Se-treated GaAs(111)B surface
• Softly-confined water cluster between free standing graphene sheets
• Relationship between Stability and Aromaticity of Graphene Nanoflakes
• Effect of edge structures on the oxygen reduction reaction activity of nitrogen-doped graphene nanoribbons
• Oxygen Reduction Reaction on N-doped Graphene Nanoclusters: Dependence on Nitrogen Configuration
• Anomalous Enhancement of Seebeck Coefficients fo the Graphene/h-BN Composites
• Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters
• 窒素ドープグラフェンナノリボンの酸素還元触媒能に及ぼすエッジの効果
• グラフェン層間に拘束された水分子クラスターの動的構造評価
• Se処理したGaAs(111)B表面の構造安定性
• グラフェン界面の水のダイナミクス
• グラフェンナノフレークの構造安定性と芳香族性
• Two- to Three-dimensional Transition of Confined Water between Freestanding Graphene Sheets
• 酸素還元反応における窒素ドープグラフェンナノクラスターの触媒性：窒素配位依存性
• Se処理GaAs(111)B表面の安定化機構
• Structural Stability of Graphene Nanoflakes: from the View Point of Aromaticity
• Two- to Three-Dimentional Transition of Softly Confined Water Between Graphene Sheets
• 二軸性歪み下におけるGaSbの電気伝導率の面方位依存性
• グラフェン表面における水の吸着と構造化
• グラフェン上の水２重層構造
• 窒素ドープグラフェンナノクラスター上における酸素還元反応の窒素原子位置依存性
• 窒素ドープカイラルエッジグラフェンナノリボンの構造安定性
• Se吸着GaAs(111)B表面の構造安定性
• 曲率を有するグラフェン表面における水ナノクラスターの吸着特性
• Mechanism of Stabilization and Magnetization of Impurity-doped Zigzag Graphene Naoribbons
• Site-dependent Oxygen Reduction Reaction of N-doped Graphene Nanoclusters
• 窒素ドープグラフェンナノリボンの酸素還元反応における触媒性
• 酸素還元反応における窒素ドープグラフェンナノクラスターの触媒性
• グラフェンナノリボンの物性
• Electrical conductivity of the biaxally-strained GaSb
• Oxygen reduction reaction on nitrogen-doped graphene nanoclusters
• Oxygen reduction reaction on nitrogen-doped graphene nanoribbons
• Formation of water layers on graphene surfaces
• Structural stability of graphene nanoflakes
• Electrical conductivity of the biaxially-strained GaSb(111) and GaSb(001)
• Structural stability of graphene nanoflakes
• Interfacial water layer on doped graphene surfaces
• GaSbの電気伝導率の二軸性歪み依存性
• 窒素ドープグラフェンナノクラスター上の酸素還元反応
• Electrical conductivity of the biaxially-strained GaSb(111) films
• Water adsorption on doped graphene surfaces
• Mechanism of Stabilization and Magnetization of Impurity-doped Zigzag Graphene Nanoribbons
• Effects of edge structures on oxygen reduction reaction for nitrogen-doped graphene nanoclusters
• Anomalous enhancement of Seebeck coefficients for the graphene/h-BN composites
• グラフェンの大気由来吸着物
• グラフェン表面における水の吸着と構造
• Mn吸着GaAs(001)-(2x2)表面の局所無秩序構造
• GaSb(111)薄膜の電気伝導率の歪み依存性
• 窒素ドープグラフェン上における酸素還元反応
• グラフェン表面の水の二重層構造
• 不純物ドープグラフェンナノリボンの安定化機構
• 窒素ドープグラフェン上の酸素還元触媒の第一原理計算
• グラフェンナノフレークの構造安定性
• グラフェンおよびグラフェンナノリボンのバリスティックフォノン熱伝導
• 窒素ドープグラフェン表面における酸素還元反応：窒素濃度依存性
• グラフェン表面における水分子層の構造化
• グラフェンのエッジ状態がもたらす不純物の安定化機構
• First-principles Evaluation of The Oxygen Reduction Reaction on Nitrogen-doped Graphene
• Layered Water on Graphene Surfaces
• Oxygen reduction reaction on the basal plane of nitrogen-doped graphene: Effects of local arrangement of dopants
• Conformational stabilization of graphene nanoflakes
• First-principles study on locally-disordered structures of the Mn-induced GaAs(001)-(2 x 2) surface
• Strain effect on the hole effective mass of GaSb: A first-priciples study
• Edge-state-induced Stabilization of Dopants in Graphene
• Oxygen Reduction Reaction on Nitrogen-doped Graphene
• Electronic Structures of the Biaxiallystrained GaSb(111) Films
• 男女共同参画委員会活動報告
• 窒素ドープジグザググラフェンナノリボンの磁性
• 酸素還元反応における窒素ドープグラフェンの触媒性
• グラフェン表面の水の層構造
• GaAs(001)表面上でのMn吸着サイト
• Oxygen reduction reaction on the basal plane of nitrogen- doped graphene
• Wettability of graphene surface
• Water layers on graphene surface
• Oxygen reduction reaction on the basal plane of nitrogen-doped graphene
• Double-layer structure of water molecules on the graphene surface
• Oxygen reduction reaction on nitrogen-doped graphene
• Catalytic reaction of oxygen on nitrogen-doped graphene
• Electrocatalytic Activity for Oxygen Reduction on Nitrogen-Doped Graphene
• Universal Feature of Seebeck Coefficients in Graphene/h-BN Nano-Composites
• Structural Stability of B-, N-Doped Graphene Nanoribbons
• Giant Seebeck Coefficiens for the Graphene/h-BN Superlattices
• 窒素ドープグラフェン上の酸素還元反応
• Catalytic Reduction of Oxygen on Nitrogen-doped Graphene
• On the Wettability of Graphene
• Anomalous Enhancement of Seebeck Coefficients for the Graphene/h-BN Superlattices
• Universality of Seebeck Coefficients in Graphene/h-BN Nano-Composites
• Reduction of Oxygen on Nitrogen-Doped Graphene
• 熱電変換材料としてのナノカーボンのポテンシャル
• グラフェンナノリボンのバリスティック熱伝導特性
• グラフェンエッジ近傍不純物の構造安定性と電子状態
• 第一原理計算によるMn吸着GaAs(001)-(nx2)の構造安定性評価
• 窒素ドープグラフェンの構造安定性と電子状態
• 窒素ドープグラフェン上の酸素分子吸着
• グラフェン/h-BN複合ナノリボンのゼーベック係数
• Configurational Disorder of Mn-induced (2x2) Reconstruction on GaAs(001)
• 電気通信大学における「パスポートプログラム」の取り組みⅢ
• 電気通信大学における専門教育としてのキャリア教育実践例 『エンジニアリングデザイン』を通した社会人基礎力養成
• （Graphene/h-BN超格子におけるゼーベック係数の異常増大）
• Anomalous enhancement of Seebeck coefficients for the graphene/h-BN superlattices
• Recent development of droplet epitaxy in NIMS: InAs QDs on InP(111)A for telecom-application and reconstruction-dependent Ga droplet formation on GaAs (100)
• Adsorption profiles of oxygen molecule on nitrogen-doped graphne
• Graphite is hydrophobic, or not?
• Seebeck coefficients of graphene/h-BN nano-composites
• Structural stability of B-, N-doped zigzag graphene nanoribbons
• グラフェンは疎水性か？
• Giant Seebeck Coefficients of the Graphene/h-BN Superlattices
• Structural stability and electronic structure of boron- or nitrogen-doped graphene
• Mn吸着ＧaAs(001)表面の電子状態と構造安定性評価
• 物理チャレンジ2013報告：III. 第２チャレンジ理論問題
• 電気通信大学における「パスポートプログラム」の取り組みII
• Giant Seebeck coefficients of graphene/BN superlattices
• Ferromagnetic coupling between Mn atoms on the GaAs(110) surface
• Effects of surface geometry on the wettability of water on graphene
• First-pinciples study on the structural stability of boron- and nitrogen-doped graphene
• Giant Seebeck effect of graphene/BN superlattices
• First-principles approach to the ballistic phonon thermal transport in graphene nano-ribbons
• 電気通信大学における「パスポートプログラム」の取り組み
• STM測定と第一原理計算によるGaAs-c(4×4)α,βの電子構造解析
• Ballistic phonon thermal conductance in graphene nano-ribbon
• Incorporation of Cr or Mn at the GaAs(001)-c(4x4)a surface
• Effects of surface geometry on the wettability of water on graphene
• グラフェンナノリボンの熱伝導特性：第一原理計算からのアプローチ
• Atomic Arrangements and structural stability of the Mn adsorbed GaAs(001) surfaces
• Structural stability and electronic states of Cr or Mn on GaAs(001)-c(4x4)
• Mn吸着GaAs(001)表面の原子配列
• Ballistic phonon thermal conductancein Graphene Nano-Ribbon: First-principles calculations
• 第一原理計算を用いた原子レベル物質設計：計算機シミュレーションで探るナノスケールの世界
• 26pPSB-36 Mn吸着(2×2)-GaAs(001)表面構造および電子状態(26pPSB 領域9ポスターセッション,領域9(表面・界面,結晶成長))
• Mn吸着(2x2)-GaAs(001)表面構造および電子状態
• GeO2酸素欠損近傍の原子レベル誘電特性：結晶構造依存性
• Local profile of the dielectric constant near the oxygen vacancy in the GeO2 films
• First-principles approach to ballistic phonon thermal conductivity in Graphene Nano-Ribbon
• Optical characteristics of novel two-dimensional carbon materials; A possibility of ultra-transparent materials
• First-principles evaluation of the local dielectric properties of GeO2 ultrathin films
• Ballistic phonon thermal conductivity of graphene nano-ribbons
• IV-IV 族半導体超格子のナノスケール誘電特性
• グラフェンナノリボンのバリスティック熱伝導特性
• アームチェアグラフェンナノリボンのバリスティック熱伝導特性
• Er2SiO5結晶・誘電率の第一原理計算
• Electronic and magnetic properties of chemically‐derived graphene nano-ribbon
• GaAs(001)-(2x2)Mn表面の原子配列と電子状態評価
• アームチェアグラフェンナノリボンのバリスティック熱伝導特性評価
• GeO2酸素欠損近傍の原子レベル誘電特性：結晶構造依存性
• Mn-induced surface reconstructions on GaAs(001)
• 酸素欠損GeO2薄膜の原子レベル誘電特性
• カルボキシル基終端ジグザググラフェンナノリボンの磁性
• 学会における人材育成
• SiCポリタイプにおける誘電率の空間的変調
• Nano-materials design by first-principles calculations
• GeO2超薄膜およびGeO2/Ge界面の誘電特性：局所誘電特性に及ぼす欠陥の影響
• SiON/SiC界面の誘電率不連続性
• カルボキシル基終端グラフェンナノリボンの磁性
• BN結晶多形ヘテロ構造の電子状態
• 酸素吸着多角柱型カーボンナノシリンダーの構造安定性と電子状態評価
• Electronic and Magnetic Properties of Functionalized Graphene
• Band and Dielectric Discontinuities of the Si1-xGe/Si1-yCy Superlattices
• 学会における若手支援の取り組み
• 「博士のキャリア相談会」で考えさせられたこと：若手は学会に何を望む？
• SiC薄膜上におけるSiON超薄膜の誘電率
• GeO2超薄膜およびGeO2/Ge界面のナノスケール誘電特性
• カルボキシル基終端ジグザググラフェンナノリボンの電子状態と磁性
• Sb安定化GaAs(001)-(2x5)表面の原子配列
• Percolation properties of nanotube/polymer composites
• Structural and electronic properties of “oxidized” carbon-nanocylinder
• Evaluation of the local dielectric constant near the oxygen vacancy for the defective HfO2 and SiO2 films
• Magnetic coupling between Mn atoms on GaAs(110)
• Local profile of dielectric constants near the oxygen vacancy in GeO2
• BN結晶多形を利用したホモマテリアル・ヘテロ構造の電子状態
• ホモマテリアルヘテロ界面の周期配列制御によるメタマテリアルの創製
• Si(001)/La2O3(01-10)界面の第一原理的バンドオフセット評価
• 第一原理計算によるEr2SiO5の結晶構造と電子状態評価
• 有限電界下の第一原理計算を用いたSiGe混晶の誘電率評価
• カーボンナノチューブ分散媒質の交流電気伝導特性
• Si/SiO2量子井戸内D-イオン束縛エネルギーの井戸幅依存性：valley-orbit相互作用効果
• HfO2・SiO2薄膜における酸素欠損近傍の局所誘電率評価
• GaAs(110)表面上のMnAs単分子層膜の磁性
• 有限電界下の第一原理計算による局所誘電率評価の試み
• Ge酸化物超薄膜の誘電特性
• 列状酸素吸着カーボンナノシリンダーの構造安定性
• CNT分散媒質の異方的交流電気伝導特性
• 列状酸素吸着CNTの構造安定性と電子物性評価
• 第一原理計算によるSi(001)/La2O3(01-10)界面のバンドオフセット評価
• HfO2薄膜の誘電特性：結晶構造依存性
• GaAs(110)表面上Ga置換Mn原子鎖の原子鎖間磁気相互作用
• バルクSi及びSi量子井戸内D-イオンのvalley-orbit分裂
• Nano-scale profile of the dielectric constant near surfaces and interfaces: A first-principles approach
• Inter-wire coupling of the Ga-substituted Mn atomic wire on GaAs(110)
• 「学会における若手人材育成―ト応物があなたのキャリアデザインを応援します―」報告
• GaAs(110)表面上のGa置換Mn原子ワイヤの原子配置とスピン・電子状態
• 歪みHfO2薄膜の誘電特性
• In-plane strain effects on dielectric properties of the HfO2 thin film
• Anisotropic half-metallic ground states of Mn atomic wires on GaAs(110)
• 応用物理学会における人材育成と男女共同参画の取り組み
• GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
• HfO2/La2O3超薄膜の誘電特性
• 博士のキャリア相談会―トライアル開催の報告―
• 最先端表面研究が切り拓くナノエレクトロニクスのブレークスルー原子レベルから環境にやさしく
• GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
• HfO2超薄膜の誘電特性
• カーボンナノチューブ分散媒質の異方的電気伝導特性
• 酸素吸着グラフェンの積層構造の構造安定性と凝集性質
• Si(111)-(7×7)表面上の銀クラスター形成過程の計算機シミュレーション
• La2O3(0001)超薄膜の誘電特性
• Activities of the Japan Society of Applied Physics (JSAP)
• La2O3(0001)超薄膜の誘電特性
• HfO2超薄膜の局所誘電率プロファイル
• GaAs(110)表面上のGa置換Mn原子ワイヤの原子配置とスピン・電子状態
• SiC結晶多形の誘電率：第一原理計算による積層構造依存性評価
• 学会における若手人材育成―応物があなたのキャリアデザインを応援します―
• Si(111)-(7x7)表面上の銀クラスター形成過程の計算機シミュレーション
• GaAs(110)表面上のGa置換Mnナノワイヤの原子配置とスピン・電子状態
• 異方的な超微粒子分散媒質の高周波電気伝導特性
• グラフェンリボンのバリスティック熱コンダクタンス
• 酸化グラフェン積層物質の構造安定性
• GaAs(001)-(2x4)-Sb吸着構造の再検討
• Anomalous enhancement of the local dielectric constant near defects in SiO2
• Polytype dependence of permittivity of SiC films
• GaAs(110)表面上のGa置換Mn原子鎖のスピン状態
• GaAs(110)表面上のGa置換Mn原子鎖のスピン状態
• Atomic-scale friction of nanometer-sized contacts
• First-principles calculations on STM images for subsurface dopants: tip-induced band-bending and dependence on dopant species
• 人材育成・男女共同参画第８回ミーティング報告「博士『後』のキャリアを考える２」
• Si/酸化物界面近傍における誘電率の空間分布：第一原理計算による評価
• 欠陥のあるSiO2/Si(001)界面・SiO2超薄膜の局所誘電率評価
• 多谷半導体中のD-基底状態：磁場効果
• SiO2/Si(001)界面におけるナノスケール誘電特性の第一原理計算
• ナノスケールの摩擦機構：ティップサイズ効果
• 不純物ドープSi(111)表面のSTM像の第一原理計算II：STM像の不純物原子種依存性
• Si(111)水素終端表面近傍不純物のSTMシミュレーション：不純物種依存性と探針誘起バンドベンディング
• SiO2薄膜中の欠陥近傍における局所誘電率の異常増大
• （グラフェンの応用物性）グラフェンの酸化とコンポジット材料
• Dielectric properties of the interface between Si and SiO_2
• Band-bending effects on STM images for subsurface dopants
• Si量子ドットの多電子基底状態
• Dielectic properties of the interface between Si adn SiO2
• Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach
• グラフェンのバリスティック熱伝導特性
• Mechanism of velocity saturation and lateral resonance in atomic-scale sliding friction
• STM simulations for B- and P-doped Si(111) surfaces
• Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity
• １次元Tomlinsonモデルを用いた原子レベル摩擦機構の解明
• 有限温度原子レベル摩擦機構～１次元Tomlinsonモデルによる解析～
• 第一原理計算によるSiO2/Si(001)界面のナノスケール誘電特性評価
• 不純物ドープSi(111)表面のSTM像の第一原理計算
• 酸素吸着グラフェンの構造双安定性の第一原理計算
• SiO2/Si(001)界面のナノスケール誘電特性
• SiO2/Si(001)界面のナノスケール誘電特性
• 外部電場はSi(001)面の表面超構造を変化させるか？
• ac conductivity and dielectric constant of conductor-insulator composites
• B／PドープSi(111)表面のSTM像の第一原理シミュレーション
• STM simulations for B- and P-doped Si(111) surfaces
• Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity at torsional resonance
• 人材育成・男女共同参画第８回ミーティング報告「博士『後』のキャリアを考える」
• Deielectproperties of the interface between Si and SiO2
• First-principles calculation of electrostatic property of the interface: Ultra-thin Al/Si(111)
• First-principles evaluations of dielectric properties from nano-scale of points of view
• 第一原理計算に基づく絶縁超薄膜誘電率の理論的解析
• D-基底状態の拡散量子モンテカルロ計算：有効質量異方性および多谷効果
• 原子摩擦力の速度飽和機構
• Dielectric discontinuity at a twin boundary in Si(111)
• Charge correlation and spin coupling in double quantum dots
• 第一原理計算による極薄膜Al/Si界面の検討：界面水素終端の影響
• 縦型２重量子ドットのスピン結合と磁場制御
• Si(111)双晶境界近傍の局所的誘電率変化
• First-principles calculations of dielectric constatns for ultrathin SiO2 films
• Dielectric discontinuity at a stacking fault in Si(111)
• First-Principles evaluations of dielectric constants
• First-principles calculations of dielectric constants for ultrathin SiO2 films
• First-principles calculations on adsorption and diffusion of oxygen atoms on graphene sheets
• Structural stabilities and electronic properties of planar Si compounds
• Controlling the spin coupling in double quantum dots
• Dielectric properties for ultra-thin films of the polytypes of SiC
• Atomic scale mechanism of friction
• Electronic and magnetic properties of BNC ribbons
• Ga- and As-Rich Limit of Surface Reconstruction on GaAs(001)
• Friction mechanism in atomic-scale
• First-principles evaluations of dielectric constants for ultra-thin semiconducting films
• SiO2超薄膜の誘電特性
• 原子レベルの摩擦機構
• SiC多形超薄膜の誘電特性
• グラフェンシートの酸素吸着と拡散過程の第一原理計算
• 若手からの提言「多様化するライフスタイルとキャリアプラン」
• ポスドク制度の実態報告
• ポスドク・任期付き技術者／研究者の現状と将来像
• 7aSP-10 SiO2超薄膜のトンネル特性(表面ナノ構造量子物性,領域9)
• 7aSM-1 GaAs(001)-c(4×4)表面に対する新たな構造モデルの提唱(表面界面構造・電子物性,領域9)
• 25pPSB-43 Si(100)面のダイマーバックリングダイナミクス(25pPSB 表面界面・結晶成長,領域9(表面・界面,結晶成長分野))
• 25pPSB-60 不均一表面層の2端子間2次元電流分布(25pPSB 表面界面・結晶成長,領域9(表面・界面,結晶成長分野))
• Interface Structural analysis using medium-energy coaxial impact-collision ion scattering spectroscopy
• Structure and electronic states for a double strand of Au atoms

書籍等出版物

• Molecular Technology, Volume 3: Materials Innovation (hardcover)
• Molecular Technology, Volume 3: Materials Innovation (e-book)
• グラフェンの機能と応用展望《普及版》
• 応用物理分野のアカデミック・ロードマップ（改訂版）
• 応用物理分野の発展史マップ
• グラフェンの機能と応用展望
• 応用物理分野のアカデミック・ロードマップの作成報告書 ISBN 978-4-903968-50-6
• 学術会議叢書１２ 「どこまで進んだ男女共同参画」
• 新訂版・表面科学の基礎と応用

作品等

共同研究・競争的資金等の研究課題

• 一酸化炭素還元能を発現させる非平面π共役系原子配列の設計と評価
• 二次元錯体配列によるシナジェティック触媒の新展開
• Mn-GaAs系二次元構造制御による新奇強磁性物質の創製と磁性発現機構の解明
• ホモマテリアルヘテロ界面の周期配列制御によるメタマテリアルの創製
• ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響
• La酸化物超薄膜/Si界面の原子レベル誘電特性の解明
• ナノコンタクトの摩擦機構と超潤滑
• ナノスケールSiO2/Si界面の電子状態と局所誘電特性に及ぼす欠陥の影響
• ナノメータ・スケール集積エレクトロニクスの理論的構築
• ヘテロエピタキシャル結晶SiO_2/Si(001)の原子レベルのトンネル障壁

メディア報道

• Transforming Surface Science: Unveiling Local Dielectric Properties through Advanced Visualization Techniques()
• Transforming Surface Science: Unveiling Local Dielectric Properties through Advanced Visualization Techniques()
• Visualizing Local Dielectric Properties of Surfaces()
• Revolutionizing surface science: Visualization of local dielectric properties of surfaces()

産業財産権

所属学協会

• American Vacuum Society
• 日本工学アカデミー
• 日本表面真空学会
• Electrochemical Society
• American Chemical Society
• 表面科学会
• 応用物理学会
• 日本物理学会
• アメリカ物理学会

委員歴

担当経験のある科目

• 上級コンピュータ演習
• 上級コンピュータ演習
• 基盤理工学専攻基礎
• 基盤理工学専攻基礎
• UECパスポートプログラムB
• UECパスポートプログラムB
• UECパスポートプログラムA
• UECパスポートプログラムA
• ナノエレクトロニクス特論
• ナノエレクトロニクス特論
• 基礎電磁気学および演習
• 凝縮系物理学特別講義IV
• 凝縮系物理学特別講義IV
• 総合コミュニケーション科学
• Ｋ課程輪講
• 電磁気学および演習
• 電磁気学および演習
• 基礎電磁気学および演習
• 基礎電磁気学および演習
• 総合コミュニケーション科学
• 総合コミュニケーション科学
• ＵＥＣパスポートプログラムII
• ＵＥＣパスポートプログラムI
• UECパスポートセミナー
• 数値計算法
• 計算数理工学
• 固体電子論
• ナノエレクトロ二クス特論
• 電磁気学第一
• Ｋ課程輪講
• Ｋ課程輪講
• 先進理工学専攻基礎
• 先進理工学専攻基礎
• ＵＥＣパスポートプログラムII
• ＵＥＣパスポートプログラムII
• ＵＥＣパスポートプログラムI
• ＵＥＣパスポートプログラムI
• UECパスポートセミナー
• UECパスポートセミナー
• 数値計算法
• 数値計算法
• 電子工学実験第一
• 電子工学実験第一
• 電子工学実験第一
• 計算数理工学
• 計算数理工学
• 固体電子論
• 固体電子論
• ナノエレクトロ二クス特論
• ナノエレクトロ二クス特論
• 電磁気学第一
• 電磁気学第一

社会貢献活動

• 星陵高等学校模擬講義
• 多摩科学技術高校模擬講義
• 佐原高校模擬授業
• EAJジェンダーシンポジウム「イノベーションと多様性」

学術貢献活動