学位

• 工学修士(電気通信大学)
• 博士(工学)(電気通信大学)

経歴

学歴

受賞

その他

• 新型マルチカソード・...

論文

• Si プラットフォーム上ダイヤモンドデバイス集積の実現に向けて
• A significant increase in carrier concentration in TiO₂ by Sm doping [DOI] [Othres link] [Othres link]
• Growth of CuAlO₂ on SiO₂ under a layer-by-layer approach conducted by digitally processed DC sputtering and its transistor characteristics [DOI] [Othres link] [Othres link]
• 反応性ガスパルスと同期したデジタル処理DCスパッタリング [DOI] [Othres link] [ResearchMap]
• Atomically Precise Deposition of (Er0.1Y0.9)2SiO5 Combined with Digitally Processed DC Sputtering and Non-Radical Oxidation [DOI]
• Highly Precise Multi-Cathode Pulsed-DC Sputtering Employing Digital Processing -Application to Layer-by-Layer Synthesis of Cubic (Er0.1Y0.9)2Zr2O7 Thin Film-
• Development of digitally processed DC reactive sputtering and its application to the synthesis of (Er0.1Y0.9)2SiO5 layered crystalline thin film [DOI]
• 希土類複合酸化物結晶と光集積化デバイスへの応用
• “Rare earth silicates as gain media for silicon photonics”, [DOI] [Web of Scientce]
• Sharp and intense emission of Si-vacancy luminescent center in diamond film grown on Si (100) substrate [Web of Scientce]
• Role of Energy Migration in Nonradiative Relaxation Processes in ErxY2-xSiO5 Crystalline Thin Films [DOI] [Web of Scientce]
• Luminescence of ErxY2-xSiO5 in Si Slot Waveguide Structures [Web of Scientce]
• Enhancement of Diamond Nucleation by Atomic Silicon Microaddition [DOI] [Web of Scientce]
• Emission and optical properties of Si slot ErxY2-xSiO5 waveguides [DOI] [Web of Scientce]
• Observation of 30dB/cm gain in Si photonic crystal slot ErxY2−xSiO5 waveguide [DOI]
• Photoluminescence enhancement and high gain amplification of ErxY2-xSiO5 waveguide [DOI] [Web of Scientce]
• Highly oriented ErxY2-xSiO5 crystalline thin films fabricated by pulsed laser deposition [Web of Scientce]
• Phase separation growth of Er2SiO5 thin film in Si-rich ErSiO preform
• Formation of highly-ordered layer-structured Er2SiO5 films by pulsed laser deposition [CiNii Research (CiNii Articles)]
• Luminescence properties of Erxy2-xSiO5 thin film prepared by sol-gel method [DOI]
• Fabrication and Evaluation of Self-Organized Er(2)SiO(5) Crystalline Films for the 1.5 mu m Emitters and Amplifiers in Silicon Photonics [Web of Scientce]
• Positive-bias enhanced growth of high quality diamond films by microwave plasma chemical vapor deposition [DOI] [Web of Scientce]
• Fabrication and characterization of Er silicates on SiO2 /Si substrates [DOI]
• Toward Small Size Waveguide Amplifiers Based on Erbium Silicate for Silicon Photonics [DOI] [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link]
• Demonstration of ErSiO superlattice crystal waveguide toward optical amplifiers and emitters [DOI]
• シリコン発光デバイス-現状と展望-
• Structure and photoluminescence comparison of Er(2)SiO(5) and Er(2)O(3) prepared by sol-gel method [Web of Scientce]
• Crystalline structure and luminescence properties of Er silicates fabricated on Si and SiO(2)/Si by the sol-gel method [Web of Scientce]
• Demonstration of ErSiO superlattice crystal waveguide toward optical amplifiers and emitters [DOI] [Web of Scientce]
• シリコンをベースとする発光デバイス-現状と展望-
• Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 mu m photoluminescence and electrical properties [DOI] [Web of Scientce]
• Towards epitaxial growth of ErSiO nanostructured crystalline films on Si substrates [DOI] [Web of Scientce]
• The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction [DOI] [Web of Scientce]
• Quasi-coherence and the field effect in Ga(As,P) “fractal” superlattice for functional photonic devices
• Upconversion emission from ErSiO superlattice crystal waveguide [Web of Scientce]
• ErSiO self-organized superlattice crystals as a 1.54μm luminescent material [DOI]
• ErSiO self-organized superlattice crystals as a 1.54 mu m luminescent material [Web of Scientce]
• Semiconducting nature of ErSiO crystalline compounds with superlattice structure [Web of Scientce]
• Electronic structures of B 2p and C 2p levels in boron-doped diamond films studied using soft x-ray absorption and emission spectroscopy [DOI] [Web of Scientce]
• Self-assembled infrared-luminescent Er-Si-O crystallites on silicon [DOI] [Web of Scientce]
• Erbium-silicon-oxide crystalline films prepared by MOMBE
• Erbium-silicon-oxide nano-crystallite waveguide formation based on nano-porous silicon
• Structural and optical properties of Mg(x)Znl(1-x)O thin films formed by sol-gel method [DOI] [Web of Scientce]
• 1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds [Web of Scientce]
• Erbium-silicon-oxide thin films formed by sol-gel method [Web of Scientce]
• Preferential suppression of Auger energy backflow by separation of Er ions from carriers with a thin oxide interlayer in Er-doped porous silicon [Web of Scientce]
• Optical characterization of Er-implanted ZnO films formed by sol-gel method [DOI]
• Fine structure in the Er-related emission spectrum from Er-Si-O matrices at room temperature under carrier mediated excitation [DOI] [Web of Scientce]
• Suppression of Auger deexcitation and temperature quenching of the Er [DOI]
• Erbium-silicon-oxide nano-complexes prepared by wet chemical synthesis [Web of Scientce]
• Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH3)(4)) [DOI] [Web of Scientce]
• Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures [Web of Scientce]
• 偏光ラマン散乱による原子層超格子構造の無秩序化の評価
• ゾルーゲル法により作製した希土類添加ZnOの可視域発光
• Luminescence from Er-doped Si film grown by solid phase epitaxy
• Perfect"fractal"behavior in XRD pattern of Ga（As,P）Fibonacci lattice grown by atomic layer epitaxy [Web of Scientce]
• Highly erbium-doped zinc-oxide thin film prepared by laser ablation and its 1.54μm emission dynamics [Web of Scientce]
• Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures
• ゾルーゲル法により作製したEr添加ZnOにおけるEr^3+^の発光
• 多孔質Si膜中に形成したEr/SiO_2_/Si構造からの1.54μmPL発光
• Direct evaluation of atomic layer intermixing via disordering in ALE grown (GaAs)(m)(GaP)(1) system [Web of Scientce]
• 1.54μm emission dynamics of erbium-doped zinc-oxide thin films [Web of Scientce]
• Site of the Er^3+^ optical centers of the 1.54μm room-temperature emission in Er-doped porous silicom and the excitation mechanism [Web of Scientce]
• Fabrication and optical transition dynamics of Er-doped ZnO thin films formed on Si substrates [Web of Scientce]
• Photo-reflectance study on Ga(As,P) fractal-structured lattice [Web of Scientce]
• Formation and device application of Er-doped nanocrystalline Si using laser ablation [Web of Scientce]
• Si添加したEr^3+^イオンの励起過程における中間準位の解明―電界パルスによる中間準位の電子正孔対解離効果―
• 酸素共添加ErドープSi発光の光励起キャリアによるオージェクエンチング
• ErドープポーラスシリコンのPL発光における酸素プレアニール効果
• Erドープ多孔質Siの発光特性に対する表面Si保護効果
• Auger deexcitation of the 1.54μmeission of Er and O implanted silicom [Web of Scientce]
• 1540nm stimulated emission from Er-doped nanocrystalline Si waveguides formed on Si substrates
• 希土類ドープ半導体発光の光励起キャリアによるオージェクエンチング
• Er ドープポーラスシリコンのPL発光における酸素プレアニール効果
• Photoluminescence and optical transition dynamics of Er3+ ions in porous Si [Web of Scientce]
• Er ドープシリコンの発光におけるエネルギー伝達機構と酸素添加の効果
• Er ドープシリコンの発光におけるエネルギー伝達機構と酸素添加の効果
• Ga（As,P）１次元フラクタル格子における電子状態
• Er添加ZnO薄膜の作成と発光
• Er添加Si微粒子材料のPLE測定
• Si中に熱拡散したErの発光スペクトル
• イオン注入法により作製したEr添加Siにおける1.54μm発光の時間応答(3)-CWレーザ照射下における時間応答特性-
• ErドープポーラスシリコンのEr発光中心サイト
• Hoドープシリコンにおける1.20μm 発光の温度特性
• 非周期系超格子における電子状態のコヒーレント制御
• Time response of 1.54um emission from highly Er-doped nanocrystalline Si films prepared by laser ablation
• Fabrication and stimulated emission of Er-doped nanocrystalline Si waveguides formed on Si substrates by laser ablation [Web of Scientce]
• Time response of 1.54 mu m emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation [Web of Scientce]
• Energy transfer efficiency of the 1.54μm luminescence of Er-implanted silicon in relation to post-implantaion annealing and impurity coimplantaion [Web of Scientce]
• Energy transfer efficiency of the 1.54μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation [Web of Scientce]
• Time response of 1.54 mu m emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation [Web of Scientce]
• イオン注入ErドープポーラスシリコンのEr発光中心サイト
• イオン注入装置により作製したEr添加Siにおける1.54μm発光の時間応答(2)-Erイオンの励起過程に与える酸素共添加の影響-
• Hoドープシリコンの光学的および電気的特性
• Er添加ナノ微結晶Si導波路からの1.54μmr誘導放出（Ｉ）
• ErドープSi微粒子の1.54μm 発光(7)-Erイオン励起過程のEr濃度依存性-
• Conduction subband formation in GaAsmGaPn Fractal Structured atomic-layer-superlatiice grown by atimic layer epitaxy
• 1540nm stimulated emission from Er-doped nanocrystalline Si waveguides formed on Si substrates
• Energy Transfer Efficiency of the 1.54μm Luminescence of Er-Implanted Silicon in Relation to Post-Implantation Annealing and Impurity Coimplantation
• (GaAs)(m)(GaP)(n) low dimensional short-period superlattice fabricated by atomic layer epitaxy [Web of Scientce]
• Time resolved study on 1.54μm emisson of Er-implanted Si
• Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon [Web of Scientce]
• InGaAs/GaAs quantum nanostructure fabrication on GaAs (111)A vicinal substrates by atomic layer epitaxy [Web of Scientce]
• Erドープポーラスシリコンの酸素プラズマ処理
• Size Control of Si nanocrystalliees formed in amorphous Si maerix by Er doping(共著) [Web of Scientce]
• Surface structure control of GaAs (111)A vicinal substrates by metal-organic vapor-phase epitaxy [Web of Scientce]
• Time decay characteristics of the Yb^3＋^-related 0.98μm emissions in porous silicon [Web of Scientce]
• Optical activation of erbium doped porous silicon by hydrogen plasma treatment [Web of Scientce]
• High-magnetic field-large blueshift and depopulation of a quasi-one-dimensional electron-hole system in P-type modulation-doped semiconductor guantum wires. (共著) [Web of Scientce]
• Photoluminescence and probe effect of Er-doped nanometer-sized Si materials [Web of Scientce]
• Multiatomic step formation with excellent uniformity on vicinal (111)A GaAs surfaces by metalorganic vapor-phase epitaxy [Web of Scientce]
• Selective area growth at multi-atomic-height steps arranged on GaAs (111)A vicinal surfaces by atomic layer epitaxy [Web of Scientce]
• Quantum wire structures incorporating (GaAs)(m)(GaP)(n) short-period superlattice fabricated by atomic layer epitaxy [Web of Scientce]
• Effects of active hydrogen on atomic layer epitaxy of GaAs [DOI]
• Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation [Web of Scientce]
• Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy [Web of Scientce]
• Magnetic field effects in p-type modulation-doped GaAs quantum wires [Web of Scientce]
• Atomic layer epitaxy of GaAs and GaAsxP1-x on nominally oriented GaAs(111) substrates with high quality surface and interfaces [Web of Scientce]
• Characterization of GaAs/GaAsP quantum wire structures fabricated by atomic layer epitaxy [Web of Scientce]
• STEP INDUCED DESORPTION OF ASHX IN ATOMIC LAYER EPITAXY ON GAAS(001) VICINAL SUBSTRATES [Web of Scientce]
• SURFACE PROCESSES OF SELECTIVE GROWTH BY ATOMIC LAYER EPITAXY [Web of Scientce]
• RECTANGULAR SHAPED QUANTUM-WIRE FABRICATION BY GROWTH MODE SWITCHING BETWEEN ISOTROPIC AND ANISOTROPIC ATOMIC LAYER EPITAXY [Web of Scientce]
• Time-resolved study on the impact excitation and quenching processes of the 1.54μm electro luminescence emission of Er ions in InP [DOI]
• REDUCTION OF CARBON IMPURITY IN GAAS BY PHOTOIRRADIATION IN ATOMIC LAYER EPITAXY [Web of Scientce]
• GAAS CRYSTALLOGRAPHIC SELECTIVE GROWTH BY ATOMIC LAYER EPITAXY AND ITS APPLICATION TO FABRICATION OF QUANTUM-WIRE STRUCTURES [Web of Scientce]
• CRYSTALLOGRAPHIC SELECTIVE GROWTH OF GAAS BY ATOMIC LAYER EPITAXY [Web of Scientce]
• EXCITATION AND RELAXATION PROCESSES OF IMPACT EXCITATION EMISSION OF ER3+ IONS IN INP [Web of Scientce]
• Formation of low-dimensional structures by atomic layer epitaxy
• Time-resolved study on the impact-excited 1.54 μm emission of Er3+ ions in InP and its excitation and quenching mechanisms [DOI]
• Emission of the 1.54um Er-related peaks by impact excitation of Er atoms in InP and its characteristics [DOI] [Othres link]
• Impact excitation of erbium-related 1.54μm luminescence peak in erbium doped InP [Web of Scientce]
• 1.54 MU-M ELECTROLUMINESCENCE BY ELECTRON-IMPACT EXCITATION OF ER ATOMS DOPED IN INP [Web of Scientce]
• Characteristics of the electroluminescence and photoluminescence emission of erbium ions doped in InP and the energy transfer mechanism [DOI]

その他業績

• Er_<0.45>Y_<1.55>SiO_5結晶導波路における導波特性の評価 [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link]
• シリコンフォトニクスに向けた新しい発光材料 Er2SiO5超格子結晶 [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link]
• シリコンを光らせるにはどうすればよいのか [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link]
• スプレーCVD法によるEr_2SiO_5結晶薄膜の作製と評価 [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link]
• ErSiO 超格子結晶 –シリコンフォトニクスに向けた新しい発光材料-
• 希土類添加半導体の可視発光とLEDの可能性 [CiNii Research (CiNii Articles)] [CiNii Books] [Othres link]

講演・口頭発表等

• Layer-by-layer Synthesis of Functional Oxides by Digitally Processed DC Sputtering with Alternating Surface Oxidation
• Room temperature synthesis of ferroelectric Hf1-xZrxO2 films under layer-by-layer approach using digitally processed DC sputtering
• Synthesis of CuAlO2/Si heterostructures by DPDS-assisted LBL approach and their transistor characteristics [ResearchMap]
• Formation of (Er0.1Y0.9)2Zr2O7 waveguide amplifier by digitally processed DC sputtering toward heterogeneous integration on SiNx waveguide circuits [ResearchMap]
• Synthesis of functional crystalline oxides by digitally processed DC sputtering synchronized with oxygen gas pulsing [ResearchMap]
• Evaluation of NV0 defects in single-crystal diamonds using Raman spectroscopy
• The Role of Reactive Gas Pulsing Synchronized with Digitally Processed DC Sputtering
• デジタル処理DCスパッタによる機能性酸化物の原子層精度堆積とフォトニクス応用
• デジタル処理 DC スパッタによる光学機能性酸化物の原子層精度堆積
• Atomically Precise Deposition of Multi-Element Metal Oxide Layered Crystals Alternating Digitally Processed DC Sputtering and Surface Oxidation
• High-Precision Multi-Cathode Pulsed-DC Sputtering Employing Digital Processing
• Layer-by-layer Synthesis of Metal Oxide Compounds by Programable Pulsed-DC Sputtering Combined with Oxygen Pulsed Supply
• Programmable Radical-Assisted Sputtering Enabling Designed Deposition Processes with Atomic Layer Accuracy
• Optical Gain in Mid-Refractive Index Contrast (Er0.1Y0.9)2Zr2O7 /SiO2 Waveguide Prepared by Radical Assisted Sputtering
• Er silicate waveguide devices for silicon photonics [Othres link]
• 蛍光イメージングに向けたナノダイヤモンド中Si-空孔発光中心の形成
• Er Silicate Waveguides for Compact Amplifiers and Light Sources on Silicon Platform
• Er Silicate Waveguides for On-Chip Optical Amplifiers
• 希土類元素を利用したシリコンフォトニクス用発光デバイス
• Er silicates system and its application to light source in Si photonics
• Enhanced Er3+ luminescence by control of energy-migration in ErxY2-xSiO5 crystalline systems
• Light sources based on Si and the related materials for silicon photonics
• ErYSiO超格子結晶の作製とシリコンフォトニクス応用
• Er2SiO5 compact optical waveguide amplifiers for silicon photonics
• Er2SiO5結晶の発光特性と光導波路増幅器への応用
• Fabrication and Evaluation of Self-organized Er2SiO5 Crystalline Films for the 1.5μm Emitters and Amplifiers in Silicon Photonics
• Influence of Upconversion on Er2SiO5 Waveguide Light Emitting Devices
• Increase in Excitation Efficiency of Er3+-Related 1.53μm Emission from Er2SiO5 Crystallite Embedded in SRSO
• Er2SiO5 ナノ構造複合材料の創製とシリコンフォトニクス応用
• Er2SiO5光導波路型発光デバイスの可能性
• 多結晶ダイヤモンド・コプレーナ三極構造における電界放出・衝突励起発光
• Si上でのﾀﾞｲﾔﾓﾝﾄﾞ深紫外発光素子に向けて-ｴｯﾁﾝｸﾞ加工したSOI基板上へのﾀﾞｲﾔﾓﾝﾄﾞの選択成長-
• MMSiを用いたﾊﾞｲｱｽ法ﾀﾞｲﾔﾓﾝﾄﾞ核発生の検討
• Structure and Photoluminescence Comparison of Er2SiO5 and Er2O3 Prepared by Sol-Gel Method
• Crystalline Structure and Luminescence Properties of Er Silicates Fabricated on Si and SiO2/Si by the Sol-Gel Method
• Er2SiO5ナノ結晶の相分離形成と発光特性
• Investigation of surface-enhanced Raman scattering of diamond related thin films deposited by ring resonator microwave plasma CVD
• Fabrication and evaluation of Er2SiO5 crystalline waveguide
• Phase separation growth of Er2SiO5 thin film in Si-rich ErSiO preform
• Formation of highly-oriented layer-structured Er2SiO5 films by pulsed laser deposition
• Excitation and luminescence properties of Er2SiO5 crystalline compounds controlled by the sol-gel fabrication process
• Siナノフォトニクス ―次世代LSIにおける電子デバイスと光デバイスとの融合―
• Er2SiO5結晶の作製と導波路型発光デバイス応用
• シリコンフォトニクスにおける発光源の開発
• シリコン・フォトニクスにおける発光デバイス
• ErSiO自己組織化超格子結晶の特性と1.54mm発光素子性能評価
• ErSiO超格子結晶の自己形成と光学特性
• ErSiO self-organized superlattice crystal and the possibility of light emitter and amplifier
• ErSiO超格子単結晶新材料の作製、1.54ìm発光特性と高効率LED実現の可能性
• ErSiO Self-Organized Superlattice Crystals as a 1.54µm Luminescent Material
• Self-organized formation of Er-Si-O superlattice
• フラクタル構造半導体格子の作製と電子状態制御
• Er-Si-O自然超格子の形成と光学特性
• Electrically excitable Erbium-silicon-oxide nano-complexes by wet chemical synthesis
• Er-O complexes doped in silicon photonic crystals by wet-chemical method and the indirect excitation emissions
• Quasi-coherence and electric field effect in Ga(As,P) "fractal" structured lattice
• 1.5um room temperature emissions from Er-O complexes formed in silicon photonic crystals
• 固相エピタキシー法により作製したErドープSi膜のフォトルミネッセンス及びME-CAICISSによる評価
• Perfect"fractal"behavior in XPD pattern of Ga（As,P）Fibonacci
• Quasi-Coherency of Electronic States in Ga (As,P) Fractal Structured Lattice
• Quasi-Coherency of Electronic States in Ga (As,P) Fractal Structured Lattice

書籍等出版物

• 理工学のための数学入門 微分方程式・ラプラス変換・フーリエ解析 [CiNii Books]
• 電気電子数学入門 微分方程式・ラプラス変換・フーリエ解析
• シリコンフォトニクス
• 電子材料ハンドブック
• Conduction Subband Formation in (GaAs)m(GaP)n Fractal struceured Atomic -Layer-Superlattice Grown by Atomic Layer Epitaxy

作品等

共同研究・競争的資金等の研究課題

• 希土類ドープSi系半導体光導波路を用いたアクティブ光回路デバイスの開発
• ErドープSiO_2/Si極薄多層膜構造のEr1.54μm発光のダイナミクス
• 低速多価イオンビームによる原子操作
• 半導体量子閉じ込め構造間の電子相互作用による秩序形成と光相互作用に関する共同研究
• 希土類元素添加Siナノ構造を用いた光メモリーに関する研究
• 原子層制御エピタキシーによる周期構造変調超格子作製と機能性新物質の創製
• 原子層制御された微細量子構造の作製とその物性評価
• 原子層エピタキシ-による原子層制御新物質の創製
• 原子層エピタキシ-選択成長による低次元量子構造作製に関する研究

メディア報道

産業財産権

• ナノ結晶ダイヤモンド及びその製造方法、製造装置
• 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド、単結晶ダイヤモンド基板の製造方法、単結晶ダイヤモンド基板及び半導体デバイス
• 原子層成長による薄膜形成方法
• ダイヤモンド薄膜のコーティング法及びダイヤモンド被膜超硬合金部材
• 原子層成長による量子細線および量子箱の形成方法
• レーザーおよびその製造方法
• 微小トンネル接合の形成方法及び微小トンネル接合素子

所属学協会

• American Vacuum Society(AVS)
• ニューダイヤモンドフォーラム
• 電子情報通信学会
• 応用物理学会

委員歴

担当経験のある科目

• 先端半導体デバイス基礎
• 電子デバイス
• 論理回路学
• 先端半導体デバイス基礎
• Current Topics in Fundamental Science and Engineering A
• 学域特別講義A（基盤理工学A）
• 応用数学
• 応用数学
• Electronic Devices
• Logic Circuits

社会貢献活動

学術貢献活動