Growth and characterization of n-type Ga2O3 films on sapphire substrates by APMOVPE [DOI]
Fabrication and characterization of an AlGaN light emitting diode with Al-doped ZnO as a current spreading tunnel junction layer [DOI][Othres link]
Fabrication and optical characterization of GaN micro-disk cavities undercut by laser-assisted photo-electrochemical etching [DOI][Othres link][Othres link]
Mode analysis of GaN two-dimensional photonic crystal nanocavities undercut by photo-electrochemical etching [DOI][Othres link][Othres link]
Deep level characterization improved by Laplace charge transient spectroscopy
Development of Laser Lift-off Process with a GaN/Al0.7Ga0.3N Strained-Layer Superlattice for Vertical UVC LED Fabrication
Effect of O2/Ni ratio on structure and surface morphology of atmospheric pressure MOCVD grown NiO thin films [DOI]
Fabrication of a p-NiO/n-Si heterojunction diode by UV oxidation of Ni deposited on n-Si [DOI]
Intense ultraviolet photoluminescence observed at room temperature from NiO nano porous thin films grown by the hydrothermal technique [DOI]
Synthesis, properties and applications of germanium nanocrystals
High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy [DOI][Web of Scientce]
Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency [DOI][Web of Scientce]
Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC p(+)n Diode Irradiated With High-Energy Electrons [DOI][Web of Scientce]
Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection [DOI][Web of Scientce]
In situ CBrCl3 etching to control size and density of InAs/GaAs quantum dots [DOI][Web of Scientce]
Compensation-dependent carrier transport of Al-doped p-type 4H-SiC [DOI]
Improvement of high-power-white-LED lamp performance by liquid injection [DOI]
Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers [DOI][Web of Scientce]
Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation [DOI][Web of Scientce]
Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers [DOI][Web of Scientce]
Compensation-dependent carrier transport of Al-doped p-type 4H-SiC
Yellowish-white photoluminescence from ZnO nanoparticles doped with Al and Li [DOI][Web of Scientce]
Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles [Web of Scientce]
Correlation between the base-emitter interface crystalline quality and the current gain in InGaP/GaAs HBTs grown by MOVPE [DOI][Web of Scientce]
Selective formation of size-controlled silicon nanocrystals by photosynthesis in SiO nanoparticle thin film [DOI][Web of Scientce]
Passivation of InP-based HBTs
Position and size-controlled photosynthesis of silicon nanocrystals in SiO2 films [Web of Scientce]
Synthesis, properties and applications of germanium nanocrystals [Web of Scientce]
Low-temperature formation of high-quality SiOx thin films by evaporation of SiO nanopowder
Material Issues in high-frequency GaInP/GaAs heterojunction bipolar transistors
Self-limited photo-assisted synthesis of silicon nanocrystals [Web of Scientce]
Self-limited photo-assisted synthesis of silicon nanocrystals [Web of Scientce]
Low temperature photoluminescence of GaAs/GaInP heterostructures measured under hydrostatic pressure [Web of Scientce]
Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures [DOI][Web of Scientce]
Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity [DOI][Web of Scientce]
Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3
Real-time measurement of rocking curves during MOVPE growth of GaxIn 1− xP/GaAs [DOI][Web of Scientce]
Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl3 and characterization of the epilayers
Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3Br and quantitative analysis of the compensation mechanism in the epilayers [DOI][Web of Scientce]
Photoluminescence Studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy
A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO [Web of Scientce]
Real-time observation of surface morphology of indium phosphide MOVPE growth with using X-ray reflectivity technique [Web of Scientce]
Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics [Web of Scientce]
Ultralow k nanoporous silica by oxidation of silicon nanoparticles [Web of Scientce]
Real-time observation of surface morphology at nanometer scale using x-ray specular reflection
Capacitance-Voltage (C-V) hysteresis in the Metal-Oxide-Semiconductor capacitor with Si nanocrystals deposited by the gas evaporation technique [Web of Scientce]
Correlation between the dielectric constant and porosity of nanoporous silica thin films deposited by the gas evaporation technique [Web of Scientce]
Spectroscopic study of partially ordered semiconductor heterojunction under high pressure and high magnetic field [Web of Scientce]
In-situ study of growth mode by reflection of synchrotron x-ray during the metal organic vapor phase epitaxial growth of InP（共著）
Raman scattering studies of the ZnSe/GaAs interface [DOI]
Wurtzite silicon nanocrystals deposited by the cluster-beam evaporation technique [Web of Scientce]
High pressure photoluminescence study of the GaAs/partially ordered GaInP interface [Web of Scientce]
Study on pressure working time and releasing rate for phase transformation of Ge [Web of Scientce]
A study of the GaAs/partially ordered GaInP interface [Web of Scientce]
Formation of Ge nanocrystals passivated with Si by gas evaporation of Si and Ge
Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy [Web of Scientce]
High-pressure study of deep emission band at GaAs/partially ordered GaInP interface [Web of Scientce]
An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN [Web of Scientce]
Ultralow KSiO2 thin films with nano-voids by gas-evaporation technique [Web of Scientce]
Selective excitation and thermal quenching of the yellow luminescence of GaN [Web of Scientce]
III-V nitrides growth by atmospheric-pressure MOVPE with a three layered flow channel [Web of Scientce]
Time-resolved photoluminescence study of ordered Ga0.5In0.5P under high pressure [Web of Scientce]
Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface [Web of Scientce]
Magnetic field dependence of up-converted photoluminescence in partially ordered GaInP2/GaAs up to 23 T
Upconversion of near GaAs bandgap photons to GaInP2 emission at the GaAs/(ordered) GaInP2 heterointerface
The formation of radiative defects at GaAs/GaInP interface [Web of Scientce]
Raman and photoluminescence studies on atmospheric pressure MOVPE grown GaN on sapphire substrates
COMPARATIVE-STUDY OF PHOTOLUMINESCENCE IN ORDERED AND DISORDERED GAINP ALLOYS UNDER HIGH-PRESSURE [Web of Scientce]
Control of defects in GaAs/GaInP interface grown by MOVPE [Web of Scientce]
Raman spectroscopy study on order disordered Ga0.52In0.48P on GaAs grown by MOVPE [Web of Scientce]
COMPARISON BETWEEN PHOTOLUMINESCENCE AND RAMAN-SCATTERING IN DISORDERED AND ORDERED ALLOYS IN GAINP [Web of Scientce]
ENERGY OF X CONDUCTION BAND MINIMA IN DISORDERED AND ORDERED GaInP2 ALLOYS
Pressure-induced Γ-X crossover in the conduction band of ordered and disordered Galnp alloys [Web of Scientce]
HYDROSTATIC-PRESSURE DEPENDENCE OF EG-100 MEV PHOTOLUMINESCENCE EMISSIONS IN N-TYPE ALGAAS [Web of Scientce]
PHOTOLUMINESCENCE OF DEEP LEVELS INDUCED BY SUP-PPM H2O IN ALGAAS GROWN BY MOVPE [Web of Scientce]
ANISOTROPY IN THE DOPING CHARACTERISTICS OF DIMETHYLCADMIUM IN GAAS GROWN BY MOVPE ON (100) GAAS [Web of Scientce]
THE EFFECTS OF GROWTH TEMPERATURE ON THE DIMETHYL-CD DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY - EVIDENCE OF IMPURITY-INDUCED NUCLEATION OF TWO-DIMENSIONAL CLUSTERS [Web of Scientce]
The effects of growth temperature on the dimethyl-Cd doping of GaAs by MOCVD
MOCVD GROWTH AND CHARACTERIZATION OF GAAS AND GAP GROWN ON SI SUBSTRATES [Web of Scientce]
QUALITY IMPROVEMENT OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAP ON SI BY ASH3 PREFLOW [Web of Scientce]
High quality Gap growth on Si sudstrates by MOCVD
その他業績
講演・口頭発表等
Fabrication and optical characterization of GaN microdisk cavities undercut by laser-assisted photo-electrochemical etching
TEGaと酸素ガスを用いた大気圧MOVPEによるβ-Ga2O3薄膜の結晶成長
マイクロマニピュレーション法によるGaNスラブ型光ナノ構造の積層
二段階光電気化学エッチングによるGaN二次元フォトニック結晶共振器の作製と光学評価
トンネル接合形成を目的としたZnO付加によるAlGaN LEDの発光特性への影響
レーザアシスト光電気化学エッチングによる GaNマイクロディスク共振器の作製と光学評価
Fabrication and characterization of AlGaN p-n diode with n-ZnO as a tunnel junction layer
Fabrication of deeply undercut GaN micro-disks by selective photo-electrochemical etching of thick InGaN/GaN superlattice
厚膜InGaN系犠牲層の光電気化学エッチングによる中空GaNマイクロディスク構造の作製
p型コンタクト層にn-ZnO層を接合したAlGaN系pnダイオードのEL特性評価
正孔注入促進に向けたp-AlGaN/n-ZnOトンネル接合のバンド構造解析
紫波長帯にフォトニックバンドギャップを有する窒化ガリウム二次元フォトニック結晶スラブの設計
p型コンタクト層にn-ZnOトンネル層を有するAlGaN系pnダイオードの作製及び電気的評価
InGaP/GaAs heterointerfaces studied by cross-sectional scanning tunneling microscopy and their impact on the device characteristics
水熱法によるZnOナノロッドの作製
酸化銅ナノロッドの太陽電池への応用
InP/InGaAs HBTデバイスに向けたp型InGaAs層の作製及び、TCADによる評価
SiO nanopowder with metastable Si-Si networks
Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Bi添加SiOによるワイドギャップ半導体の作製
Ni酸化物の物性評価とp-GaNオーミックコンタクトへの応用
Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
走査型トンネル顕微鏡によるGaInP/GaAsへテロ界面の粗さ解析
Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Yellowish-white photoluminescence from ZnO nanoparticles
自然超格子を有するInGaP/GaAs HBTへテロ接合界面におけるバンド不連続の研究
表面プラズモン効果を用いたラマン分光法による低密度のGe超微粒子の分析
InGaP/GaAsヘテロ接合バイポーラトランジスタ特性への表面再結合の影響
バラスト抵抗用Ni微粒子混合誘電体薄膜の作製と評価
BiドープSiOx導電膜の特性評価
NiO薄膜を用いたp-GaNオーミックコンタクトに関する研究
バラスト抵抗用Ni微粒子混合Si3N4薄膜の作製と評価
走査型トンネル顕微鏡によるGaInP氏前兆格子構造の観察
ナノポーラスシリカLow-k膜の低温熱処理と膜機械強度
階段状ドーピングプロファイルによるバラクターダイオードの高性能化
Pdナノクリスタル含有SiO2の大気中及び低真空中SPM観察
Self-limiting photo-assisted synthesis of silicon nanocrystals
Self-limiting photo-assited synthesis of silicon nanocrystals
A study of band alignment in GaAs/GaInP（Partially ordered）heterostructureswith high pressure
書籍等出版物
Nano-Scale Materials: From Science to Technology
Spectroscopic Study of the Interface and Band alignment at the GaInP(Partially-ordered)/GaAs Heterojunction using High Pressure and High Magnetic Field. Spontaneous Ordering in Semiconductor Alloys, edited by A. Mascarenhas,
